SFF10N100M datasheet, PDF - EEWORLD Datasheet

SFF10N100M: Description10 AMP / 1000 Volts 1.2 ohm N-Channel Power MOSFET; CategoryDiscrete semiconductor The transistor; File Size185KB，2 Pages; ManufacturerSSDI; Websitehttp://www.ssdi-power.com/

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SFF10N100M Overview

10 AMP / 1000 Volts 1.2 ohm N-Channel Power MOSFET

Parameter Name	Attribute value
Maker	SSDI
Parts packaging code	TO-254
package instruction	FLANGE MOUNT, S-MSFM-P3
Contacts	3
Reach Compliance Code	compli
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	1000 V
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	1.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	S-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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