- 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory
V
DD
: 3.0Vto 3.6V
Standard Microcircuit Drawing 5962-01517
PRODUCT DESCRIPTION
The UT28F256LV amorphous silicon anti-fuse PROM is a high
performance, asynchronous, radiation-hardened, 32K x 8
programmable memory device. The UT28F256LV PROM
features fully asychronous operation requiring no external clocks
or timing strobes. An advanced radiation-hardened twin-well
CMOS process technology is used to implement the
UT28F256LV. The combination of radiation-hardness, fast
access time, and low power consumption make the UT28F256LV
ideal for high speed systems designed for operation in radiation
environments.
A(14:0)
DECODER
MEMORY
ARRAY
SENSE AMPLIFIER
CE
PE
OE
PROGRAMMING
CONTROL
LOGIC
DQ(7:0)
Figure 1. PROM Block Diagram
2
DEVICE OPERATION
The UT28F256LV has three control inputs: Chip Enable (CE),
Program Enable (PE), and Output Enable (OE); fifteen address
inputs, A(14:0); and eight bidirectional data lines, DQ(7:0). CE
is the device enable input that controls chip selection, active, and
standby modes. Asserting CE causes I
DD
to rise to its active value
and decodes the fifteen address inputs to select one of 32,768
words in the memory. PE controls program and read operations.
During a read cycle, OE must be asserted to enable the outputs.
PIN CONFIGURATION
PIN NAMES
A(14:0)
CE
OE
PE
DQ(7:0)
Address
Chip Enable
Output Enable
Program Enable
Data Input/Data Output
Table 1. Device Operation Truth Table
1
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
DD
PE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
Notes:
1. “X” is defined as a “don’t care” condition.
2. Device active; outputs disabled.
OE
X
0
1
1
PE
1
1
0
1
CE
1
0
0
0
I/O MODE
Three-state
Data Out
Data In
Three-state
MODE
Standby
Read
Program
Read
2
ABSOLUTE MAXIMUM RATINGS
1
(Referenced to V
SS
)
SYMBOL
V
DD
V
I/O
T
STG
P
D
T
J
Θ
JC
I
I
PARAMETER
DC supply voltage
Voltage on any pin
Storage temperature
Maximum power dissipation
Maximum junction temperature
Thermal resistance, junction-to-case
2
DC input current
LIMITS
-0.3 to 7.0
-0.5 to (V
DD
+ 0.5)
-65 to +150
1.5
+175
3.3
UNITS
V
V
°C
W
°C
°C/W
mA
±
10
Notes:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
2. Test per MIL-STD-883, Method 1012, infinite heat sink.
3
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
T
C
V
IN
PARAMETER
Positive supply voltage
Case temperature range
DC input voltage
LIMITS
3.0 to 3.6
-55 to +125
0 to V
DD
UNITS
V
°C
V
DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(V
DD
= 3.0V to 3.6V; -55°C < T
C
< +125°C)
SYMBOL
V
IH
V
IL
V
OL1
V
OL2
V
OH1
V
OH2
C
IN 1
C
IO 1, 4
I
IN
I
OZ
PARAMETER
High-level input voltage
Low-level input voltage
Low-level output voltage
Low-level output voltage
High-level output voltage
High-level output voltage
Input capacitance
I
OL
= 100µA, V
DD
= 3.0V
I
OL
= 1.0mA, V
DD
= 3.0V
I
OH
= -100µA, V
DD
= 3.0V
I
OH
= -1.0mA, V
DD
= 3.0V
ƒ
= 1MHz, V
DD
= 3.3V
V
IN
= 0V
ƒ
= 1MHz, V
DD
= 3.3V
V
OUT
= 0V
V
IN
= 0V to V
DD
V
O
= 0V to V
DD
V
DD
= 3.6V
OE = 3.6V
V
DD
= 3.6V, V
O
= V
DD
V
DD
= 3.6V, V
O
= 0V
CMOS input levels (I
OUT
= 0), V
IL
=
0.2V
V
DD
, PE = 3.6V, V
IH
= 3.0V
CMOS input levels V
IL
= V
SS
+0.25V
CE = V
DD
- 0.25 V
IH
= V
DD
- 0.25V
-3
-8
V
DD
-0.15
V
DD
-0.3
15
CONDITION
MINIMUM
0.7V
DD
0.25V
DD
V
SS
+ 0.05
V
SS
+ 0.10
MAXIMUM
UNIT
V
V
V
V
V
V
pF
Bidirectional I/O capacitance
15
pF
µA
µA
Input leakage current
Three-state output leakage
current
3
8
I
OS 2,3
I
DD1
(OP)
5
Short-circuit output current
90
-90
mA
mA
Supply current operating
@15.4MHz (65ns product)
50.0
1.0
mA
mA
I
DD2
(SB)
post-rad
Supply current standby
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 1E6 rad(Si).
1. Measured only for initial qualification, and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
4. Functional test.
5. Derates at 1.5mA/MHz.
4
READ CYCLE
A combination of PE greater than V
IH
(min), and CE less than
V
IL
(max) defines a read cycle. Read access time is measured
from the latter of device enable, output enable, or valid address
to valid data output.
An address access read is initiated by a change in address inputs
while the chip is enabled with OE asserted and PE deasserted.
Valid data appears on data output, DQ(7:0), after the specified
t
AVQV
is satisfied. Outputs remain active throughout the entire
cycle. As long as device enable and output enable are active, the
address inputs may change at a rate equal to the minimum read
cycle time.
AC CHARACTERISTICS READ CYCLE (Post-Radiation)*
(V
DD
= 3.0V to 3.6V; -55°C < T
C
< +125°C)
SYMBOL
t
AVAV1
t
AVQV
t
AXQX2
t
GLQX2
t
GLQV
t
GHQZ
t
ELQX2
t
ELQV
t
EHQZ
PARAMETER
Read cycle time
Read access time
Output hold time
OE-controlled output enable time
OE-controlled access time
OE-controlled output three-state time
CE-controlled output enable time
CE-controlled access time
CE-controlled output three-state time
The chip enable-controlled access is initiated by CE going active
while OE remains asserted, PE remains deasserted, and the
addresses remain stable for the entire cycle. After the specified
t
ELQV
is satisfied, the eight-bit word addressed by A(14:0)
appears at the data outputs DQ(7:0).
Output enable-controlled access is initiated by OE going active
while CE is asserted, PE is deasserted, and the addresses are
stable. Read access time is t
GLQV
unless t
AVQV
or t
ELQV
have
not been satisfied.
28F256LV-65
MIN
MAX
65
65
0
0
35
35
0
65
35
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 1E6 rads(Si).
1. Functional test.
2. Three-state is defined as a 400mV change from steady-state output voltage.
[i=s]This post was last edited by jishuaihu on 2015-5-25 10:39[/i] I plan to use the following circuit to manage the power supply of handheld devices. Please analyze whether there are any problems.Let...
I have tried EVC4.0 compiler or vs2005. error C2660: 'CWnd::AnimateWindow' : function does not take 3 arguments #undef WINVER #define WINVER 0X5000 I added this to the top of stdafx.h but it still doe...
Background: I use DS18B20 as a temperature acquisition signal to collect the temperature signal of the power unit on the SPWM modulated IGBT driver board. In the static test, DS18B20 can correctly sam...
Now the design requires the factory product to add Ethernet communication function, and there is no similar product in the past. So I want to know the general scheme of using STM32F107 as the main con...
From being a global leader to losing the market, Korean battery manufacturers have always wanted to regain the lost market and dignity, but facing Chinese battery manufacturers represented by CAT...[Details]
The intelligent driving community has its own rhythm. Some are busy pushing new versions and focusing on R&D, others are busy with publicity and promotion, and still others are immersed in mass pro...[Details]
1. Equipment Overview
Shell-and-tube heat exchangers are a common heat exchange device used in chemical evaporation and heating equipment. Currently, the tubesheets of shell-and-tube heat exch...[Details]
A line scan lens is an industrial lens used with line scan cameras. Its imaging principle is to capture the image of the workpiece using a linear sensor and then perform digital signal processing t...[Details]
introduction
Bluetooth technology is a short-range wireless communication technology designed to replace wired cables. It is a wireless communication technology standard developed by the SIG, ...[Details]
New energy vehicles are increasingly popular with consumers due to policies and energy conservation. Once you've purchased your vehicle, maintenance is essential. However, due to the different powe...[Details]
Electric motors and internal combustion engines of the same power have similar torque levels. High power requires high torque, and torque determines a vehicle's acceleration speed, commonly known a...[Details]
We are entering a new era where people are increasingly affordably equipped with more electronic gadgets. Electronics have become essential to our lives. For example, the average consumer now owns ...[Details]
1. Introduction
Electronic scales are gradually replacing traditional measuring tools like springs and balances in everyday life, such as electronic price computing scales and electronic weigh...[Details]
On August 22, the National Energy Administration released the latest data, showing that by the end of July 2025, China's total number of electric vehicle charging infrastructure will reach 16.696 m...[Details]
Since its invention in the mid-1940s, the microwave oven has evolved from a humble beginning to commercial use, entering homes in the 1960s and rapidly gaining popularity. Its basic functionality a...[Details]
The digital TV set-top box consists of a tuner, QAM demodulator, TS demultiplexer, MPEG-2 decoder, PAUNTSC video encoder, embedded CPU system and peripheral interfaces, CA module, and uplink data m...[Details]
There are basically three causes of spontaneous combustion of electric vehicles: The first is that the battery components are punctured or suffer fatal damage due to a collision accident, and part ...[Details]
UPS stands for Uninterruptible Power Supply, which includes energy storage devices. It is mainly used to provide uninterruptible power supply for devices that require high power stability.
...[Details]
With the continuous development of the industrial automation industry, we are seeing an increasing number of intelligent devices using flexible, efficient, and precise robotic arms to p...[Details]
Integrated technical exchanges
京公网安备 11010802033920号
EEWORLD
