2SK3698-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
200305
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Symbol
Ratings
V
DS
900
V
DSX *5
900
I
D
±3.7
I
D(puls]
±14.8
V
GS
±30
I
AR
*2
3.7
E
AS
*1
171.1
dV
DS
/dt
*4
40
dV/dt
*3
5
P
D
Ta=25°C
2.02
Tc=25°C
120
T
ch
+150
-55 to +150
T
stg
Unit
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
*1 L=22.9mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph
*3 I
F
< -I
D
, -di/dt=50A/µs, Vcc < BV
DSS
, Tch < 150°C *4 VDS< 900V
=
=
=
=
°C
°C
*2 Tch <150°C
=
*5 V
GS
=-30V
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
V
DS
=900V V
GS
=0V
T
ch
=25°C
T
ch
=125°C
V
DS
=720V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=1.85A V
GS
=10V
I
D
=1.85A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=600V I
D
=1.85A
V
GS
=10V
R
GS
=10
Ω
V
CC
=450V
I
D
=3.7A
V
GS
=10V
L=22.9mH T
ch
=25°C
I
F
=3.7A V
GS
=0V T
ch
=25°C
I
F
=3.7A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Min.
900
3.0
Typ.
Max.
5.0
25
250
100
4.30
650
90
5
29
11
48
26
24.8
9.6
5.6
1.50
Units
V
V
µA
nA
Ω
S
pF
2
3.31
4
430
60
3.5
19
7
32
17
16.5
6.4
3.7
0.9
1.0
4.0
ns
nC
3.7
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
1.042
62.0
Units
°C/W
°C/W
1
2SK3698-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
FUJI POWER MOSFET
150
5
Typical Output Characteristics
ID=f(VDS):80
µ
s pulse test,Tch=25
°
C
20V
10V
7.0V
6.5V
125
4
6.0V
100
3
PD [W]
75
ID [A]
2
50
VGS=5.5V
25
1
0
0
25
50
75
100
125
150
0
0
5
10
15
20
25
Tc [
°
C]
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80
µ
s pulse test,VDS=25V,Tch=25
°
C
10
Typical Transconductance
gfs=f(ID):80
µ
s pulse test,VDS=25V,Tch=25
°
C
ID[A]
1
gfs [S]
1
0.1
0
1
2
3
4
5
6
7
8
9
10
0.1
ID [A]
1
10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
µ
s pulse test,Tch=25
°
C
VGS=5.5V
4.4
6.0V
6.5V
7.0V
4.2
10V
12
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=1.85A,VGS=10V
10
RDS(on) [
Ω
]
4.0
20V
8
3.8
RDS(on) [
Ω
]
6
max.
3.6
4
3.4
2
typ.
3.2
3.0
0
1
2
3
4
5
0
-50
-25
0
25
50
75
100
125
150
ID [A]
Tch [
°
C]
2
2SK3698-01
FUJI POWER MOSFET
7.0
6.5
6.0
5.5
5.0
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
14
Typical Gate Charge Characteristics
VGS=f(Qg):ID=3.7A,Tch=25
°
C
12
Vcc= 180V
450V
720V
8
max.
10
VGS(th) [V]
4.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
min.
VGS [V]
4.0
6
4
2
0
0
5
10
15
20
25
Tch [
°
C]
Qg [nC]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
10
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
µ
s pulse test,Tch=25
°
C
10
0
Ciss
C [nF]
10
-1
IF [A]
1
Coss
10
-2
Crss
10
-3
10
0
10
1
10
2
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDS [V]
VSD [V]
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10
Ω
350
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=90V
I
AS
=2A
300
tf
250
10
2
I
AS
=3A
E
AS
[mJ]
td(off)
200
I
AS
=3.7A
150
t [ns]
td(on)
10
1
100
tr
50
10
0
0
-1
10
10
0
10
1
0
25
50
75
100
125
150
ID [A]
starting Tch [
°
C]
3
2SK3698-01
FUJI POWER MOSFET
10
2
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25
°
C,Vcc=90V
Avalanche Current I
AV
[A]
10
1
Single Pulse
10
0
10
-1
10
-8
10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
t
AV
[sec]
10
1
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
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4
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