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LH28F016SUT-70

Description
16M (1M x 16 , 2M x 8) Flash Memory
Categorystorage    storage   
File Size250KB,37 Pages
ManufacturerSHARP
Websitehttp://sharp-world.com/products/device/
Download Datasheet Parametric Compare View All

LH28F016SUT-70 Overview

16M (1M x 16 , 2M x 8) Flash Memory

LH28F016SUT-70 Parametric

Parameter NameAttribute value
MakerSHARP
package instructionSOP,
Reach Compliance Codeunknow
Maximum access time120 ns
Other featuresUSER CONFIGURABLE AS 1M X 16; CAN BE OPERATED AT 5V SUPPLY
JESD-30 codeR-PDSO-G56
memory density16777216 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals56
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Programming voltage5 V
Certification statusNot Qualified
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal locationDUAL
LH28F016SU
FEATURES
16M (1M × 16, 2M × 8) Flash Memory
56-PIN TSOP
TOP VIEW
User-Configurable x8 or x16 Operation
User-Selectable 3.3 V or 5 V V
CC
70 ns Maximum Access Time
0.32 MB/sec Write Transfer Rate
100,000 Erase Cycles per Block
32 Independently Lockable Blocks
5 V Write/Erase Operation (5 V V
PP
)
– No Requirement for DC/DC Converter
to Write/Erase
– 160 ns Maximum Access Time
(V
CC
= 2.7 V)
3/5
CE
1
NC
A
20
A
19
A
18
A
17
A
16
V
CC
A
15
A
14
A
13
A
12
CE
0
V
PP
RP
A
11
A
10
A
9
A
8
GND
A
7
A
6
A
5
A
4
A
3
A
2
A
1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
WP
WE
OE
RY/BY
DQ
15
DQ
7
DQ
14
DQ
6
GND
DQ
13
DQ
5
DQ
12
DQ
4
V
CC
GND
DQ
11
DQ
3
DQ
10
DQ
2
V
CC
DQ
9
DQ
1
DQ
8
DQ
0
A
0
BYTE
NC
NC
Minimum 2.7 V Read capability
Revolutionary Architecture
– Pipelined Command Execution
– Write During Erase
– Command Superset of
Sharp LH28F008SA
5 µA (Typ.) I
CC
in CMOS Standby
1 µA (Typ.) Deep Power-Down
State-of-the-Art 0.55 µm ETOX™
Flash Technology
56-Pin, 1.2 mm × 14 mm × 20 mm
TSOP (Type I) Package
28F016SUT-1
Figure 1. TSOP Configuration
1

LH28F016SUT-70 Related Products

LH28F016SUT-70 LH28F016SUT-10 LH28F016SUT
Description 16M (1M x 16 , 2M x 8) Flash Memory 16M (1M x 16 , 2M x 8) Flash Memory 16M (1M x 16 , 2M x 8) Flash Memory
Maker SHARP SHARP -
package instruction SOP, SOP, -
Reach Compliance Code unknow unknow -
Maximum access time 120 ns 150 ns -
Other features USER CONFIGURABLE AS 1M X 16; CAN BE OPERATED AT 5V SUPPLY USER CONFIGURABLE AS 1M X 16; CAN BE OPERATED AT 5V SUPPLY -
JESD-30 code R-PDSO-G56 R-PDSO-G56 -
memory density 16777216 bi 16777216 bi -
Memory IC Type FLASH FLASH -
memory width 8 8 -
Number of functions 1 1 -
Number of terminals 56 56 -
word count 2097152 words 2097152 words -
character code 2000000 2000000 -
Operating mode ASYNCHRONOUS ASYNCHRONOUS -
Maximum operating temperature 70 °C 70 °C -
organize 2MX8 2MX8 -
Output characteristics 3-STATE 3-STATE -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
encapsulated code SOP SOP -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Parallel/Serial PARALLEL PARALLEL -
Programming voltage 5 V 5 V -
Certification status Not Qualified Not Qualified -
Maximum supply voltage (Vsup) 5.5 V 5.5 V -
Minimum supply voltage (Vsup) 3 V 3 V -
Nominal supply voltage (Vsup) 3.3 V 3.3 V -
surface mount YES YES -
technology CMOS CMOS -
Temperature level COMMERCIAL COMMERCIAL -
Terminal form GULL WING GULL WING -
Terminal location DUAL DUAL -
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