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SPD50SM

Description
200 mAMP 50 - 125 VOLTS 5 nsec HYPER FAST RECTIFIER
CategoryDiscrete semiconductor    diode   
File Size145KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric Compare View All

SPD50SM Overview

200 mAMP 50 - 125 VOLTS 5 nsec HYPER FAST RECTIFIER

SPD50SM Parametric

Parameter NameAttribute value
package instructionO-LELF-R2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeO-LELF-R2
Maximum non-repetitive peak forward current4 A
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Maximum output current0.2 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.005 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Base Number Matches1
PRELIMINARY
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
SPD48SM & SMS
thru
SPD51SM & SMS
200 mAMP
50 - 125 VOLTS
5 nsec
HYPER FAST
RECTIFIER
SURFACE MOUNT
ROUND TAB
"SM"
SURFACE MOUNT
SQUARE TAB
"SMS"
Designer's Data Sheet
FEATURES:
•
•
•
•
•
•
•
Hyper Fast Recovery: 5 nsec maximum
Subminiature Surface Mount Package
Square Tab Mounting (Round Tabs Available)
Hermetically Sealed
Planar Passivated Chip
For High Efficiency Applications
Replaces 1N4148 - 1N4151 types
• TX, TXV, and Space Level Screening Available
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
SPD48SM & SMS
SPD49SM & SMS
SPD50SM & SMS
SPD51SM & SMS
SYMBOL
V
RRM
V
RWM
V
R
Io
I
FSM
T
OP
& T
STG
R
2JE
VALUE
50
75
100
125
200
4
-65 TO +200
0.35
UNITS
Volts
Average Rectified Forward Current
(Resistive Load, 60Hz, Sine Wave, T
A
= 25
o
C
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow
junction to reach equilibrium between pulses, T
A
= 25
o
C)
Operating and Storage Temperature
Maximum Thermal Resistance
Junction to End Tab
mAmps
Amps
o
C
o
C/mW
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0085C

SPD50SM Related Products

SPD50SM SPD48SM SPD49SM SPD51SM
Description 200 mAMP 50 - 125 VOLTS 5 nsec HYPER FAST RECTIFIER 200 mAMP 50 - 125 VOLTS 5 nsec HYPER FAST RECTIFIER 200 mAMP 50 - 125 VOLTS 5 nsec HYPER FAST RECTIFIER 200 mAMP 50 - 125 VOLTS 5 nsec HYPER FAST RECTIFIER
package instruction O-LELF-R2 O-LELF-R2 O-LELF-R2 O-LELF-R2
Contacts 2 2 2 2
Reach Compliance Code compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V 1.2 V 1.2 V 1.2 V
JESD-30 code O-LELF-R2 O-LELF-R2 O-LELF-R2 O-LELF-R2
Maximum non-repetitive peak forward current 4 A 4 A 4 A 4 A
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C
Maximum output current 0.2 A 0.2 A 0.2 A 0.2 A
Package body material GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 100 V 50 V 75 V 125 V
Maximum reverse recovery time 0.005 µs 0.005 µs 0.005 µs 0.005 µs
surface mount YES YES YES YES
Terminal form WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND
Terminal location END END END END
Is Samacsys N - N N
Base Number Matches 1 - 1 1
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