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1N4150W_06

Description
0.2 A, 50 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size31KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
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1N4150W_06 Overview

0.2 A, 50 V, SILICON, SIGNAL DIODE

WTE
POWER SEMICONDUCTORS
1N4150W / 1N4151W
Pb
SURFACE MOUNT FAST SWITCHING DIODE
Features
!
!
!
High Conductance
A
SOD-123
Dim
A
Min
3.6
2.5
1.4
0.5
0.4
0.95
Max
3.9
2.8
1.8
0.7
0.2
1.35
0.12
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
!
For General Purpose Switching Application
C
!
Plastic Material – UL Recognition Flammability
Classification 94V-O

E
D
B
B
C
D
E
G
H
J
Mechanical Data
!
!
!
!
!
!
Case: SOD-123, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.01 grams (approx.)
Marking: 1N4150W A4
1N4151W A5
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
G
H
J
All Dimensions in mm
Maximum Ratings
@T
A
=25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t = 1.0µs
@ t = 1.0s
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
d
R
JA
T
j
, T
STG
1N4150W
50
50
35
400
200
4.0
1.0
410
300
-65 to +150
1N4151W
75
Unit
V
V
V
300
150
2.0
0.5
500
mA
mA
A
mW
K/W
°C
1N4150W / 1N4151W
1 of 4
© 2006 Won-Top Electronics

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