NTHD2102P
Power MOSFET
−8.0 V, −4.6 A Dual P−Channel ChipFETt
Features
•
Offers an Ultra Low R
DS(on)
Solution in the ChipFET Package
•
Miniature ChipFET Package 40% Smaller Footprint than TSOP−6
•
•
•
•
•
making it an Ideal Device for Applications where Board Space is at a
Premium
Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
Environments such as Portable Electronics
Designed to Provide Low R
DS(on)
at Gate Voltage as Low as 1.8 V, the
Operating Voltage used in many Logic ICs in Portable Electronics
Simplifies Circuit Design since Additional Boost Circuits for Gate
Voltages are not Required
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels using the same Basic Topology
Pb−Free Package is Available
V
(BR)DSS
http://onsemi.com
R
DS(on)
TYP
50 mW @ −4.5 V
−8.0 V
68 mW @ −2.5 V
100 mW @ −1.8 V
S
1
S
2
−4.6 A
I
D
MAX
G
1
G
2
Applications
•
Optimized for Battery and Load Management Applications in
Portable Equipment such as MP3 Players, Cell Phones, Digital
Cameras, Personal Digital Assistant and other Portable Applications
•
Charge Control in Battery Chargers
•
Buck and Boost Converters
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous
− 5 seconds
Total Power Dissipation
Continuous @ T
A
= 25°C
(5 sec) @ T
A
= 25°C
Continuous @ 85°C
(5 sec) @ 85°C
Operating Junction and Storage Temperature
Range
Continuous Source Current
(Diode Conduction)
Thermal Resistance (Note 1)
Junction−to−Ambient, 5 sec
Junction−to−Ambient, Continuous
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
GS
I
D
I
D
P
D
1.1
2.1
0.6
1.1
T
J
, T
stg
Is
−55 to
+150
−1.1
°C
A
°C/W
R
qJA
R
qJA
T
L
60
113
260
°C
Value
−8.0
"8.0
−3.4
−4.6
Unit
V
V
A
D
1
8
W
D
1
7
D
2
6
D
2
5
D
1
P−Channel MOSFET
D
2
P−Channel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN
CONNECTIONS
1 S
1
2 G
1
3 S
2
4 G
2
1
MARKING
DIAGRAM
8
D5 M
G
Shipping
†
3000/Tape & Reel
3000/Tape & Reel
7
6
5
2
3
4
D5 = Specific Device Code
M = Month Code
G
= Pb−Free Package
ORDERING INFORMATION
Device
NTHD2102PT1
NTHD2102PT1G
Package
ChipFET
ChipFET
(Pb−Free)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTHD2102P/D
©
Semiconductor Components Industries, LLC, 2005
1
November, 2005 − Rev. 5
NTHD2102P
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 2)
Temperature Coefficient (Positive)
Gate−Body Leakage Current Zero
Zero Gate Voltage Drain Current
V
(Br)DSS
I
GSS
I
DSS
V
GS
= 0 V, I
D
= −250
mA
V
DS
= 0 V, V
GS
=
"8.0
V
V
DS
= −6.4 V, V
GS
= 0 V
V
DS
= −6.4 V, V
GS
= 0 V,
T
J
= 85°C
V
DS
= V
GS
, I
D
= −250
mA
V
GS
= −4.5 V, I
D
= −3.4 A
V
GS
= −2.5 V, I
D
= −2.7 A
V
GS
= −1.8 V, I
D
= −1.0 A
V
DS
= −5.0 V, I
D
= −3.4 A
I
S
= −1.1 A, V
GS
= 0 V
−8.0
−
−
−
−
−
"100
−1.0
−5.0
V
nA
mA
Symbol
Test Condition
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Static Drain−to−Source On−Resistance
V
GS(th)
R
DS(on)
−0.45
−
−
−
−
−
−
50
68
100
8.0
−0.8
−1.5
58
85
160
−
−1.2
V
mW
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 3
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
g
FS
V
SD
S
V
C
iss
C
oss
C
rss
V
DS
= −6.4 V
V
GS
= 0 V
f = 1.0 MHz
−
−
−
715
160
120
−
−
−
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DD
= −6.4 V
V
GS
= −4.5 V
I
D
= −3.2 A
R
G
= 2.0
W
V
GS
= −2.5 V
I
D
= −3.2 A
V
DS
= −6.4 V
I
F
= −0.9 A, di/dt = 100
8.0
20
20
15
8.0
2.2
4.0
15
−
−
−
−
16
−
−
30
ns
nC
Source−Drain Reverse Recovery Time
t
rr
nA
2. Pulse Test: Pulse Width = 250
ms,
Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTHD2102P
TYPICAL ELECTRICAL CHARACTERISTICS
10
−2.4 thru −8 V
8
−ID,Drain Current (A)
−2 V
6
−1.8 V
−ID,Drain Current (A)
T
J
= 25°C
8
10
6
4
4
T
j
= 100°C
2
25°C
2
−1.6 V
−1.4 V
−55°C
3.0
0
0
1
2
3
4
5
−V
DS
, Drain−to−Source Voltage (V)
6
0
0
0.5
1.0
1.5
2.0
2.5
−V
GS
, Gate−to−Source Voltage (V)
Figure 1. On−Region Characteristics
0.30
r DS(on),On−Resistance (
Ω )
0.25
V
GS
= −1.8 V
0.20
0.15
0.10
0.05
V
GS
= −4.5 V
0
0
2
3
4
5
6
−I
D
, Drain Current (A)
7
8
0.8
−50
−25
V
GS
= −2.5 V
r DS(on),On−Resistance (
Ω )
(Normalized)
1.2
Figure 2. Transfer Characteristics
V
GS
= −4.5 V
1.1
1.0
0.9
0
25
50
75
100
T
J
, Junction Temperature (°C)
125
150
Figure 3. On−Resistance vs. Drain Current and
Gate Voltage
10000
V
GS
= 0 V
−IDSS, Leakage (nA)
C, Capacitance (pF)
1000
T
J
=
125°C
1500
1200
900
600
300
1
0
2
4
6
−V
DS
, Drain−to−Source Voltage (V)
8
0
−8
1800
Figure 4. On−Resistance Variation vs.
Temperature
T
J
= 25°C
C
iss
100
T
j
= 100°C
10
C
rss
C
iss
C
oss
C
rss
−6
−4
−2
0
2
4
−V
DS
, Drain−to−Source Voltage (V)
6
8
Figure 5. Drain−to−Source Leakage Current
vs. Voltage
Figure 6. Capacitance Variation
http://onsemi.com
3
NTHD2102P
TYPICAL ELECTRICAL CHARACTERISTICS
4
−V Gate−to−Source Voltage (V)
GS,
8
−VDS,Drain−to−Source Voltage (V)
1000
V
DD
= −10 V
I
D
= −1 A
V
GS
= −4.5 V
100
t, Time (ns)
t
d(off)
t
f
t
r
10
t
d(on)
3
Q
T
Q
1
2
Q
2
−V
GS
6
4
1
−V
DS
0
0
1
2
3
4
5
6
T
J
= 25°C
I
D
= −3.4 A
2
0
7
8
Q
g,
Total Gate Charge (nC)
1
0
10
R
G
, Gate Resistance (Ohms)
100
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
50
V
GS
= 0 V
T
J
= 25°C
−I S,
Source Current (A)
4
Power (W)
40
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
5
3
30
2
20
1
10
0
0.40
0.50
0.60
0.70
0.80
0.90
−V
SD
, Source−to−Drain Voltage (V)
1.00
0
10−4
10−3
10−2
10 −1
1
Time (sec)
10
100
600
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Single Pulse Power
http://onsemi.com
4
京公网安备 11010802033920号
EEWORLD
