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87CNQ020A

Description
40 A, 20 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size203KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

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87CNQ020A Overview

40 A, 20 V, SILICON, RECTIFIER DIODE

87CNQ020A Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionR-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.51 V
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Maximum non-repetitive peak forward current1100 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current40 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage20 V
surface mountNO
technologySCHOTTKY
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Bulletin PD-20045 rev. A 09/01
87CNQ020A
SCHOTTKY RECTIFIER
New GenIII D-61 Package
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 40 Apk, T
J
= 125 °C
range
80 Amp
Description/Features
Values
80
20
6000
0.32
Units
A
V
A
V
The center tap Schottky rectifier module has been optimized
for ultra low forward voltage drop specifically for 3.3V output
power supplies. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in parallel switching power supplies,
converters, reverse battery protection, and redundant power
subsystems.
150 °C T
J
operation
Center tap module
Optimized for 3.3V application
Ultra low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
(per leg)
- 55 to 150
°C
New fully transfer-mold low profile, small
footprint, high current package
Case Styles
83CNQ...A
83CNQ...ASM
83CNQ...ASL
D61-8
www.irf.com
D61-8-SM
D61-8-SL
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