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SDR1DSM

Description
1 A, 200 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size157KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SDR1DSM Overview

1 A, 200 V, SILICON, SIGNAL DIODE

SDR1DSM Parametric

Parameter NameAttribute value
MakerSSDI
package instructionO-LELF-R2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2.3 V
JESD-30 codeO-LELF-R2
Maximum non-repetitive peak forward current25 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current1 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.05 µs
surface mountYES
technologySCHOTTKY
Terminal formWRAP AROUND
Terminal locationEND
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR1ASM, SMM, & SMS
thru
SDR1MSM, SMM, & SMS
1.0 AMPS
50
1000 VOLTS
50 – 70 nsec ULTRA FAST RECTIFIER
FEATURES:
Designer’s Data Sheet
Part Number/Ordering Information
1/
SDR1
__ __ __
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV
S = S Level
Package Type
SM = Surface Mount Round Tab
SMM = Surface Mount Mini
SMS = Surface Mount Square Tab
Voltage
A = 50 V
B = 100 V
D = 200 V
G = 400 V
J = 600 V
K = 800 V
M = 1000 V
Ultra Fast Recovery: 50-70 ns Max @ 25
°
C
4/
80-120 ns Max @ 100
°
C
4/
Single Chip Construction
PIV to 1000 Volts (1200V Version available
Low Reverse Leakage Current
Hermetically Sealed
For High Efficiency Applications
Available in Round, Mini, and Square Tab
Versions
Metallurgically Bonded
TX, TXV, and S-Level Screening Available
2/
Hyper Fast Version available
MAXIMUM RATINGS
3/
RATING
Peak Repetitive Reverse Voltage
And
DC Blocking Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, T
A
= 25°C)
SYMBOL
SDR1A ..
SDR1B ..
SDR1D ..
SDR1G ..
SDR1J ..
SDR1K ..
SDR1M ..
VALUE
50
100
200
400
600
800
1000
1
25
-65 to +175
28
45
35
UNIT
V
RRM
V
RWM
V
R
Volts
I
O
I
FSM
T
OP
and T
STG
SM
SMM
SMS
Amp
Amps
°C
°C/W
Peak Surge Current
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, T
A
= 25°C)
Operating & Storage Temperature
Thermal Resistance, Junction to End Tab
R
θJE
NOTES:
1/
For Ordering Information, Price, Operating Curves, and Availability-
Contact Factory.
2/
Screened to MIL-PRF-19500.
3/
Unless Otherwise Specified, All Electrical Characteristics @25ºC.
SM (Round Tab)
SMM (Mini)
SMS (Square Tab)
4/
Recovery Conditions: I
F
= 0.5 Amp, I
R
= 1.0 Amp, I
RR
to .25 Amp.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0003D
DOC

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