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BAT54WS

Description
0.1 A, 30 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size28KB,3 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
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BAT54WS Overview

0.1 A, 30 V, SILICON, SIGNAL DIODE

BAT54WS Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionULTRA SMALL, PLASTIC PACKAGE-2
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.2000 W
Diode typeSignal diode
Maximum reverse recovery time0.0050 us
Maximum repetitive peak reverse voltage30 V
Maximum average forward current0.1000 A
WTE
POWER SEMICONDUCTORS
BAT54WS
Pb
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
!
!
!
Low Turn-on Voltage
A
SOD-323
Dim
Min
2.30
1.75
1.15
0.25
0.05
0.70
0.30
Max
2.70
1.95
1.35
0.35
0.15
0.95
A
B
C
D
Fast Switching
PN Junction Guard Ring for Transient and
ESD Protection
!
Designed for Surface Mount Application
C
!
Plastic Material – UL Recognition Flammability
Classification 94V-O

E
D
B
G
Mechanical Data
!
!
!
!
!
!
Case: SOD-323, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.004 grams (approx.)
Marking: L4
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 3
@T
A
=25°C unless otherwise specified
E
G
H
All Dimensions in mm
H
Maximum Ratings
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Repetitive Peak Forward Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t < 1.0s
Symbol
V
RRM
V
RWM
V
R
I
F
I
FRM
I
FSM
P
d
R
JA
T
j
, T
STG
BAT54WS
Unit
30
200
300
600
200
625
-55 to +125
V
mA
mA
mA
mW
K/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage
Forward Voltage (Note 2)
Reverse Leakage Current (Note 2)
Junction Capacitance
Reverse Recovery Time
@T
A
=25°C unless otherwise specified
Symbol
V
(BR)R
V
F
I
R
C
j
t
rr
Min
30
Typ
Max
0.32
1.0
2.0
10
5.0
Unit
V
V
µA
pF
nS
Test Condition
@ I
RS
= 100µA
@ I
F
= 1.0mA
@ I
F
= 100mA
@ V
R
= 25V
V
R
= 1.0V, f = 1.0MHz
I
F
= 10mA through I
R
= 10mA to
I
R
= 1.0mA, R
L
= 100
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. t < 300µs, duty cycle < 2%.
BAT54WS
1 of 3
© 2006 Won-Top Electronics

BAT54WS Related Products

BAT54WS BAT54WS-T1 BAT54WS_06
Description 0.1 A, 30 V, SILICON, SIGNAL DIODE 0.1 A, 30 V, SILICON, SIGNAL DIODE 0.1 A, 30 V, SILICON, SIGNAL DIODE
Number of terminals 2 2 2
Number of components 1 1 1
surface mount Yes YES Yes
Terminal form GULL WING GULL WING GULL WING
Terminal location pair DUAL pair
Diode component materials silicon SILICON silicon
Diode type Signal diode RECTIFIER DIODE Signal diode
Maximum reverse recovery time 0.0050 us 0.005 µs 0.0050 us
Maximum repetitive peak reverse voltage 30 V 30 V 30 V
Processing package description ULTRA SMALL, PLASTIC PACKAGE-2 - ULTRA SMALL, PLASTIC PACKAGE-2
Lead-free Yes - Yes
EU RoHS regulations Yes - Yes
state ACTIVE - ACTIVE
packaging shape Rectangle - Rectangle
Package Size SMALL OUTLINE - SMALL OUTLINE
terminal coating MATTE Tin - MATTE Tin
Packaging Materials Plastic/Epoxy - Plastic/Epoxy
Craftsmanship SCHOTTKY - SCHOTTKY
structure single - single
Maximum power consumption limit 0.2000 W - 0.2000 W
Maximum average forward current 0.1000 A - 0.1000 A

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