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BAV21W-T1

Description
0.2 A, 200 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size41KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric Compare View All

BAV21W-T1 Overview

0.2 A, 200 V, SILICON, SIGNAL DIODE

BAV21W-T1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerWon-Top Electronics Co., Ltd.
package instructionPLASTIC PACKAGE-2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDSO-G2
JESD-609 codee0
Maximum non-repetitive peak forward current2.5 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.41 W
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
WTE
POWER SEMICONDUCTORS
BAV19W – BAV21W
Pb
SURFACE MOUNT FAST SWITCHING DIODE
Features
!
!
!
High Conductance
A
SOD-123
Dim
A
Min
3.6
2.5
1.4
0.5
0.4
0.95
Max
3.9
2.8
1.8
0.7
0.2
1.35
0.12
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
!
For General Purpose Switching Application
C
!
Plastic Material – UL Recognition Flammability
Classification 94V-O

E
D
B
B
C
D
E
G
H
J
Mechanical Data
!
!
!
!
!
Case: SOD-123, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.01 grams (approx.)
Marking: BAV19W A8
BAV20W A80
BAV21W A82
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
G
H
J
All Dimensions in mm
!
Maximum Ratings
@T
A
=25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t = 1.0ms
@ t = 1.0s
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
d
R
JA
T
j
, T
STG
BAV19W
120
100
70
BAV20W
200
150
105
400
200
2.5
0.5
410
500
-65 to +150
BAV21W
250
200
140
Unit
V
V
V
mA
mA
A
mW
K/W
°C
BAV19W – BAV21W
1 of 4
© 2006 Won-Top Electronics

BAV21W-T1 Related Products

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Description 0.2 A, 200 V, SILICON, SIGNAL DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE 0.2 A, 150 V, SILICON, SIGNAL DIODE 0.2 A, 250 V, SILICON, SIGNAL DIODE 0.2 A, 250 V, SILICON, SIGNAL DIODE 0.2 A, 120 V, SILICON, SIGNAL DIODE
Diode component materials SILICON SILICON - SILICON - - silicon
Diode type RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE - - Signal diode
Number of components 1 1 - 1 - - 1
Number of terminals 2 2 - 2 - - 2
Maximum repetitive peak reverse voltage 200 V 100 V - 150 V - - 120 V
Maximum reverse recovery time 0.05 µs 0.05 µs - 0.05 µs - - 0.0500 us
surface mount YES YES - YES - - Yes
Terminal form GULL WING GULL WING - GULL WING - - GULL WING
Terminal location DUAL DUAL - DUAL - - pair
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