71V256SA15YGI datasheet, PDF - EEWORLD Datasheet

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71V256SA15YGI: DescriptionSOJ-28, Tube; Categorystorage storage; File Size162KB，9 Pages; ManufacturerIDT (Integrated Device Technology); Environmental Compliance

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71V256SA15YGI Overview

SOJ-28, Tube

71V256SA15YGI Parametric

Parameter Name	Attribute value
Brand Name	Integrated Device Technology
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IDT (Integrated Device Technology)
Parts packaging code	SOJ
package instruction	SOJ, SOJ28,.34
Contacts	28
Manufacturer packaging code	PJG28
Reach Compliance Code	compliant
ECCN code	EAR99
Samacsys Description	SOIC 300 MIL- J BEND
Maximum access time	15 ns
I/O type	COMMON
JESD-30 code	R-PDSO-J28
JESD-609 code	e3
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	32KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ28,.34
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
Maximum standby current	0.002 A
Minimum standby current	3 V
Maximum slew rate	0.085 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Matte Tin (Sn)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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Lower Power

3.3V CMOS Fast SRAM

256K (32K x 8-Bit)

Features

Description

71V256SA

◆

Ideal for high-performance processor secondary cache

Commercial (0°C to +70°C) and Industrial (–40°C to +85°C)

temperature range options

Fast access times:

– Commercial and Industrial: 12/15/20ns

Low standby current (maximum):

– 2mA full standby

Small packages for space-efficient layouts:

– 28-pin 300 mil SOJ

– 28-pin TSOP Type I

Produced with advanced high-performance CMOS

technology

Inputs and outputs are LVTTL-compatible

Single 3.3V(±0.3V) power supply

Industrial temperature range (–40°C to +85°C) is available

for selected speeds

Green parts available, see ordering information

The IDT71V256SA is a 262,144-bit high-speed static RAM organized

as 32K x 8. It is fabricated using a high-performance, high-reliability CMOS

technology.

The IDT71V256SA has outstanding low power characteristics while

at the same time maintaining very high performance. Address access

times of as fast as 12ns are ideal for 3.3V secondary cache in 3.3V

desktop designs.

When power management logic puts the IDT71V256SA in standby

mode, its very low power characteristics contribute to extended battery life.

By taking

HIGH, the SRAM will automatically go to a low power standby

mode and will remain in standby as long as

remains HIGH. Further-

more, under full standby mode (CS at CMOS level, f=0), power consump-

tion is guaranteed to always be less than 6.6mW and typically will be much

smaller.

The IDT71V256SA is packaged in a 28-pin 300 mil SOJ and a 28-pin

300 mil TSOP Type I.

Functional Block Diagram

ADDRESS

DECODER

262,144 BIT

MEMORY ARRAY

GND

I/O

INPUT

DATA

CIRCUIT

I/O

I/O CONTROL

CONTROL

CIRCUIT

3101 drw 01

Jun.02.20

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