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5962-8670511RX

Description
Standard SRAM, 4KX4, 25ns, CMOS, CDIP20, 0.300 INCH, CERDIP-20
Categorystorage    storage   
File Size243KB,9 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric Compare View All

5962-8670511RX Overview

Standard SRAM, 4KX4, 25ns, CMOS, CDIP20, 0.300 INCH, CERDIP-20

5962-8670511RX Parametric

Parameter NameAttribute value
MakerIDT (Integrated Device Technology)
Parts packaging codeDIP
package instructionDIP,
Contacts20
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time25 ns
JESD-30 codeR-GDIP-T20
JESD-609 codee0
length25.3365 mm
memory density16384 bit
Memory IC TypeSTANDARD SRAM
memory width4
Number of functions1
Number of terminals20
word count4096 words
character code4000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize4KX4
Package body materialCERAMIC, GLASS-SEALED
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height5.08 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
width7.62 mm
Base Number Matches1

5962-8670511RX Related Products

5962-8670511RX 5962-8670502RX 5962-8670506RX 5962-8670513RX
Description Standard SRAM, 4KX4, 25ns, CMOS, CDIP20, 0.300 INCH, CERDIP-20 Standard SRAM, 4KX4, 25ns, CMOS, CDIP20, 0.300 INCH, CERDIP-20 Standard SRAM, 4KX4, 45ns, CMOS, CDIP20, 0.300 INCH, CERDIP-20 Standard SRAM, 4KX4, 45ns, CMOS, CDIP20, 0.300 INCH, CERDIP-20
Parts packaging code DIP DIP DIP DIP
package instruction DIP, DIP, DIP, DIP,
Contacts 20 20 20 20
Reach Compliance Code unknown unknown unknown unknown
ECCN code 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C
Maximum access time 25 ns 25 ns 45 ns 45 ns
JESD-30 code R-GDIP-T20 R-GDIP-T20 R-GDIP-T20 R-GDIP-T20
JESD-609 code e0 e0 e0 e0
length 25.3365 mm 25.3365 mm 25.3365 mm 25.3365 mm
memory density 16384 bit 16384 bit 16384 bit 16384 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 4 4 4 4
Number of functions 1 1 1 1
Number of terminals 20 20 20 20
word count 4096 words 4096 words 4096 words 4096 words
character code 4000 4000 4000 4000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
organize 4KX4 4KX4 4KX4 4KX4
Package body material CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED
encapsulated code DIP DIP DIP DIP
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 5.08 mm 5.08 mm 5.08 mm 5.08 mm
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V
surface mount NO NO NO NO
technology CMOS CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY MILITARY
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location DUAL DUAL DUAL DUAL
width 7.62 mm 7.62 mm 7.62 mm 7.62 mm
Base Number Matches 1 1 1 1
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