Standard SRAM, 4KX4, 25ns, CMOS, CDIP20, 0.300 INCH, CERDIP-20
| Parameter Name | Attribute value |
| Maker | IDT (Integrated Device Technology) |
| Parts packaging code | DIP |
| package instruction | DIP, |
| Contacts | 20 |
| Reach Compliance Code | unknown |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 25 ns |
| JESD-30 code | R-GDIP-T20 |
| JESD-609 code | e0 |
| length | 25.3365 mm |
| memory density | 16384 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 4 |
| Number of functions | 1 |
| Number of terminals | 20 |
| word count | 4096 words |
| character code | 4000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 4KX4 |
| Package body material | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Certification status | Not Qualified |
| Maximum seat height | 5.08 mm |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | TIN LEAD |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| width | 7.62 mm |
| Base Number Matches | 1 |
| 5962-8670511RX | 5962-8670502RX | 5962-8670506RX | 5962-8670513RX | |
|---|---|---|---|---|
| Description | Standard SRAM, 4KX4, 25ns, CMOS, CDIP20, 0.300 INCH, CERDIP-20 | Standard SRAM, 4KX4, 25ns, CMOS, CDIP20, 0.300 INCH, CERDIP-20 | Standard SRAM, 4KX4, 45ns, CMOS, CDIP20, 0.300 INCH, CERDIP-20 | Standard SRAM, 4KX4, 45ns, CMOS, CDIP20, 0.300 INCH, CERDIP-20 |
| Parts packaging code | DIP | DIP | DIP | DIP |
| package instruction | DIP, | DIP, | DIP, | DIP, |
| Contacts | 20 | 20 | 20 | 20 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
| Maximum access time | 25 ns | 25 ns | 45 ns | 45 ns |
| JESD-30 code | R-GDIP-T20 | R-GDIP-T20 | R-GDIP-T20 | R-GDIP-T20 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| length | 25.3365 mm | 25.3365 mm | 25.3365 mm | 25.3365 mm |
| memory density | 16384 bit | 16384 bit | 16384 bit | 16384 bit |
| Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| memory width | 4 | 4 | 4 | 4 |
| Number of functions | 1 | 1 | 1 | 1 |
| Number of terminals | 20 | 20 | 20 | 20 |
| word count | 4096 words | 4096 words | 4096 words | 4096 words |
| character code | 4000 | 4000 | 4000 | 4000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C |
| organize | 4KX4 | 4KX4 | 4KX4 | 4KX4 |
| Package body material | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP | DIP | DIP | DIP |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum seat height | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | MILITARY | MILITARY | MILITARY |
| Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
| width | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm |
| Base Number Matches | 1 | 1 | 1 | 1 |