|
SDR4N |
SDR4G |
SDR4J |
| Description |
RECTIFIER DIODE |
RECTIFIER DIODE |
RECTIFIER DIODE |
| Maker |
SSDI |
SSDI |
SSDI |
| package instruction |
E-XALF-W2 |
HERMETIC SEALED PACKAGE-2 |
E-XALF-W2 |
| Contacts |
2 |
2 |
2 |
| Reach Compliance Code |
compli |
compli |
compli |
| ECCN code |
EAR99 |
EAR99 |
EAR99 |
| Other features |
LOW LEAKAGE CURRENT |
LOW LEAKAGE CURRENT |
LOW LEAKAGE CURRENT |
| application |
EFFICIENCY |
EFFICIENCY |
EFFICIENCY |
| Shell connection |
ISOLATED |
ISOLATED |
ISOLATED |
| Configuration |
SINGLE |
SINGLE |
SINGLE |
| Diode component materials |
SILICON |
SILICON |
SILICON |
| Diode type |
RECTIFIER DIODE |
RECTIFIER DIODE |
RECTIFIER DIODE |
| Maximum forward voltage (VF) |
1 V |
0.9 V |
0.9 V |
| JESD-30 code |
E-XALF-W2 |
E-XALF-W2 |
E-XALF-W2 |
| Maximum non-repetitive peak forward current |
75 A |
75 A |
75 A |
| Number of components |
1 |
1 |
1 |
| Phase |
1 |
1 |
1 |
| Number of terminals |
2 |
2 |
2 |
| Maximum operating temperature |
175 °C |
175 °C |
175 °C |
| Maximum output current |
3 A |
3 A |
3 A |
| Package body material |
UNSPECIFIED |
UNSPECIFIED |
UNSPECIFIED |
| Package shape |
ELLIPTICAL |
ELLIPTICAL |
ELLIPTICAL |
| Package form |
LONG FORM |
LONG FORM |
LONG FORM |
| Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
| Maximum repetitive peak reverse voltage |
1200 V |
400 V |
600 V |
| Maximum reverse recovery time |
0.08 µs |
0.05 µs |
0.05 µs |
| surface mount |
NO |
NO |
NO |
| Terminal form |
WIRE |
WIRE |
WIRE |
| Terminal location |
AXIAL |
AXIAL |
AXIAL |