C5024 datasheet, PDF - EEWORLD Datasheet

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C5024: Description50A AVALANCHE AUTOMOTIVE CELL DIODE; CategoryDiscrete semiconductor diode; File Size36KB，2 Pages; ManufacturerWon-Top Electronics Co., Ltd.; Websitehttps://www.wontop.com/

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C5024 Overview

50A AVALANCHE AUTOMOTIVE CELL DIODE

C5024 Parametric

Parameter Name	Attribute value
Maker	Won-Top Electronics Co., Ltd.
Reach Compliance Code	compli
ECCN code	EAR99
application	GENERAL PURPOSE
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.08 V
JESD-30 code	O-CEDB-N2
Maximum non-repetitive peak forward current	500 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	50 A
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Maximum repetitive peak reverse voltage	20 V
Maximum reverse current	0.2 µA
surface mount	YES
technology	AVALANCHE
Terminal form	NO LEAD
Terminal location	END

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WTE

POWER SEMICONDUCTORS

C5020 & C5024

Pb

50A AVALANCHE AUTOMOTIVE CELL DIODE

Features

Diffused Junction

Low Leakage

Low Cost

High Surge Current Capability

Die Size 220 mil HEX

D

Anode

+

C

E

Mechanical Data

Case: Cell Diode Passivated with Silicon Rubber

Terminal: Copper Disc with Ag Plated

Polarity: Indicated by Large Disc On Cathode

Side, Add “R” Suffix to Indicate Reverse Polarity,

i.e. C5020R

Mounting Position: Any

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 2

B

Dim

Max

A

—

7.40

B

—

6.55

C

0.75

—

D

1.0

—

E

—

2.2

All Dimensions in mm

C50

Min

A

Maximum Ratings and Electrical Characteristics

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Output Current

Breakdown Voltage Min.

Breakdown Voltage Max.

@T

C

= 150°C

@I

R

= 100mA

@I

R

= 100mA

Symbol

V

RRM

V

RWM

V

R

I

O

V

BR

@T

A

=25°C unless otherwise specified

C5020

C5024

Unit

16

20

V

50

20

26

24

32

A

V

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

Forward Voltage

Peak Reverse Current

At Rated DC Blocking Voltage

@I

F

= 100A

I

FSM

500

A

V

FM

I

RM

R

θJA

T

J

, T

STG

1.08

200

1.0

-40 to +150

V

nA

°C/W

°C

@T

A

= 25°C

Typical Thermal Resistance Junction to Ambient

Operating and Storage Temperature Range

C5020 & C5024

1 of 2

C5024 Related Products

	C5024	C5020
Description	50A AVALANCHE AUTOMOTIVE CELL DIODE	50A AVALANCHE AUTOMOTIVE CELL DIODE
Maker	Won-Top Electronics Co., Ltd.	Won-Top Electronics Co., Ltd.
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
application	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	CATHODE	CATHODE
Configuration	SINGLE	SINGLE
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.08 V	1.08 V
JESD-30 code	O-CEDB-N2	O-CEDB-N2
Maximum non-repetitive peak forward current	500 A	500 A
Number of components	1	1
Phase	1	1
Number of terminals	2	2
Maximum operating temperature	150 °C	150 °C
Minimum operating temperature	-40 °C	-40 °C
Maximum output current	50 A	50 A
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON
Maximum repetitive peak reverse voltage	20 V	16 V
Maximum reverse current	0.2 µA	0.2 µA
surface mount	YES	YES
technology	AVALANCHE	AVALANCHE
Terminal form	NO LEAD	NO LEAD
Terminal location	END	END

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