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C50A

Description
50 A, 50 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size36KB,2 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric Compare View All

C50A Overview

50 A, 50 V, SILICON, RECTIFIER DIODE

C50A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionO-CEDB-N2
Reach Compliance Codecompli
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.08 V
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current500 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current50 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Maximum repetitive peak reverse voltage50 V
Maximum reverse current3 µA
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Base Number Matches1
WTE
POWER SEMICONDUCTORS
C50A – C50K
Pb
50A AUTOMOTIVE CELL DIODE
Features
Diffused Junction
Low Leakage
Low Cost
High Surge Current Capability
Die Size 220 mil HEX
D
Anode
+
C
E
Mechanical Data
Case: Cell Diode Passivated with Silicon Rubber
Terminal: Copper Disc with Ag Plated
Polarity: Indicated by Large Disc On Cathode
Side, Add “R” Suffix to Indicate Reverse Polarity,
i.e. C50AR
Mounting Position: Any
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 2
B
Dim
Max
A
7.40
B
6.55
C
0.75
D
1.0
E
2.2
All Dimensions in mm
C50
Min
A
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
C
= 150°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
C50A
@T
A
=25°C unless otherwise specified
C50B
C50D
C50G
C50J
C50K
Unit
50
100
200
400
600
800
V
35
70
140
50
280
420
560
V
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 100A
I
FSM
500
A
V
FM
1.08
V
@T
A
= 25°C
I
RM
3.0
µA
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
R
θJA
T
J
, T
STG
1.0
-40 to +150
°C/W
°C
C50A – C50K
1 of 2
© 2006 Won-Top Electronics

C50A Related Products

C50A C50B C50A_06 C50D 78L18L-S08-K C50J C50G
Description 50 A, 50 V, SILICON, RECTIFIER DIODE 50 A, 100 V, SILICON, RECTIFIER DIODE 50 A, 50 V, SILICON, RECTIFIER DIODE 50 A, 200 V, SILICON, RECTIFIER DIODE 3-TERMINAL 0.1A POSITIVE VOLTAGE REGULATOR 50 A, 600 V, SILICON, RECTIFIER DIODE 50 A, 50 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? incompatible incompatible - incompatible - incompatible incompatible
Reach Compliance Code compli unknow - unknow - compli compli
application GENERAL PURPOSE GENERAL PURPOSE - GENERAL PURPOSE - GENERAL PURPOSE GENERAL PURPOSE
Shell connection CATHODE CATHODE - CATHODE - CATHODE CATHODE
Configuration SINGLE SINGLE - SINGLE - SINGLE SINGLE
Diode component materials SILICON SILICON - SILICON - SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.08 V 1.08 V - 1.08 V - 1.08 V 1.08 V
JESD-30 code O-CEDB-N2 O-CEDB-N2 - O-CEDB-N2 - O-CEDB-N2 O-CEDB-N2
Maximum non-repetitive peak forward current 500 A 500 A - 500 A - 500 A 500 A
Number of components 1 1 - 1 - 1 1
Phase 1 1 - 1 - 1 1
Number of terminals 2 2 - 2 - 2 2
Maximum operating temperature 150 °C 150 °C - 150 °C - 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C - -40 °C - -40 °C -40 °C
Maximum output current 50 A 50 A - 50 A - 50 A 50 A
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED - CERAMIC, METAL-SEALED COFIRED - CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND - ROUND - ROUND ROUND
Package form DISK BUTTON DISK BUTTON - DISK BUTTON - DISK BUTTON DISK BUTTON
Maximum repetitive peak reverse voltage 50 V 100 V - 200 V - 600 V 400 V
Maximum reverse current 3 µA 3 µA - 3 µA - 3 µA 3 µA
surface mount YES YES - YES - YES YES
Terminal form NO LEAD NO LEAD - NO LEAD - NO LEAD NO LEAD
Terminal location END END - END - END END
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