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1N4454-GT3

Description
Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS, MINIMELF-2
CategoryDiscrete semiconductor    diode   
File Size122KB,3 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

1N4454-GT3 Overview

Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS, MINIMELF-2

1N4454-GT3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDO-35
package instructionO-LALF-W2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Maximum output current0.15 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.002 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
SENSITRON
SEMICONDUCTOR
Data Sheet 2774, Rev. -

1N4454
FAST SWITCHING DIODE
Features
!
!
!
!
Fast Switching Speed
Glass Package Version for High Reliability
High Conductance
Available in Both Through-Hole and Surface
Mount Versions
A
B
A
C
D
1N4454
Mechanical Data
!
!
!
!
!
Case: DO-35, MiniMELF
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight:
DO-35
0.13 grams
Marking: Cathode Band Only
DO-35
Max
Min
Dim
A
B
C
D
Min
Max
25.40
4.00
0.60
2.00
in mm
1.000
0.157
0.024
0.079
In inch
Maximum Ratings
@T
A
=25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Rectified Current (Average), Half Wave Rectification with
Resistive Load and f
50MHz (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Derate Above 25°C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t = 1.0µs
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
d
R
θJA
T
j
, T
STG
Value
75
75
50
200
150
4000
500
300
-65 to +200
Unit
V
V
V
mA
mA
mA
mW
K/W
°C
• 



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World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com

1N4454-GT3 Related Products

1N4454-GT3 1N4454-T3
Description Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS, MINIMELF-2 Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS, MINIMELF-2
Is it lead-free? Lead free Contains lead
Is it Rohs certified? conform to incompatible
Parts packaging code DO-35 DO-35
package instruction O-LALF-W2 O-LALF-W2
Contacts 2 2
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-35 DO-35
JESD-30 code O-LALF-W2 O-LALF-W2
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 200 °C 200 °C
Minimum operating temperature -65 °C -65 °C
Maximum output current 0.15 A 0.15 A
Package body material GLASS GLASS
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.5 W 0.5 W
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 75 V 75 V
Maximum reverse recovery time 0.002 µs 0.002 µs
surface mount NO NO
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1

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