®
DMV1500HD
DAMPER + MODULATION DIODE FOR CRT TV
Table 1: Main Product Characteristics
DAMPER
I
F(AV)
I
Fpeak
(max)
V
RRM
t
rr
(typ)
V
F
(typ)
V
FP
(typ)
6A
12 A
1500 V
150 ns
1.0 V
21 V
MODUL.
3A
12 A
600 V
60 ns
1.0 V
5V
1
2
3
DAMPER
MODULATION
1
2
3
FEATURES AND BENEFITS
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■
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Full kit in one package
High breakdown voltage capability
Very fast recovery diode
Specified turn on switching characteristics
Low static and peak forward voltage drop for
low dissipation
Insulated version:
Insulated voltage = 2000 V
RMS
Capacitance = 7 pF
Planar technology allowing high quality and
best electrical characteristics
Outstanding performance of well proven DTV
as damper and new faster Turbo 2 600V
technology as modulation
TO-220FPAB
DMV1500HDFD
3
1
2
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■
TO-220FPAB FD6 Bending
DMV1500HDFD6
(optional)
DESCRIPTION
High voltage semiconductor especially designed
for horizontal deflection stage in standard and high
resolution video display with E/W correction.
The insulated TO-220FPAB package includes
both the DAMPER diode and the MODULATION
diode, thanks to a dedicated design.
Assembled on automated line, it offers very low
dispersion values on insulating and thermal
performances.
Table 2: Order Codes
Part Number
DMV1500HDFD
DMV1500HDFD6
Marking
DMV1500HD
DMV1500HD
March 2005
REV. 1
1/8
DMV1500HD
Table 3: Absolute Maximum Ratings
Symbol
V
RRM
I
Fpeak
I
FSM
T
stg
T
j
Parameter
Repetitive peak reverse voltage
Peak working forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
F = 56kHz
t
p
= 10ms sinusoidal
Value
Damper
1500
12
75
150
Modul.
600
12
50
Unit
V
A
A
°C
°C
-40 to +150
Table 4: Thermal Resistance
Symbol
R
th(j-c)
Parameter
Junction to case thermal resistance
Value
3.8
Unit
°C/W
Table 5: Static Electrical Characteristics
Value
Symbol
Parameter
Test conditions
V
R
= 1500 V
V
R
= 600 V
I
F
= 6 A
I
F
= 6 A
1.1
1.15
T
j
= 25°C
Typ.
I
R
*
V
F
**
Pulse test:
T
j
= 125°C
Typ.
100
3
1
1
Max.
1000
30
1.35
1.25
Unit
Max.
100
3
1.6
1.4
Reverse leakage current
Damper
Modul.
Damper
Modul.
µA
Forward voltage drop
* tp = 5 ms,
δ
< 2%
V
** tp = 380 µs,
δ
< 2%
To evaluate the maximum conduction losses of the
DAMPER
and
MODULATION
diodes use the following equations:
DAMPER:
P = 1.05 x I
F(AV)
+ 0.05 x I
F (RMS)
MODULATION:
P = 0.89 x I
F(AV)
+ 0.055 x I
F (RMS)
2
2
Table 6: Recovery Characteristics
Value
Symbol
Parameter
Test conditions
I
F
= 100mA
I
R
=100mA
I
rr
= 10mA
Damper
Typ.
T
j
= 25°C
1000
Max.
Modul.
Typ.
250
Max.
400
ns
150
250
60
85
Unit
t
rr
Reverse recovery time
I
F
= 1A
dI
F
/dt = -50 A/µs T
j
= 25°C
V
R
=30V
2/8
DMV1500HD
Table 7: Turn-On Switching Characteristics
Symbol
Parameter
Test conditions
I
F
= 6 A
dI
F
/dt = 80 A/µs
V
FR
= 3 V
I
F
= 6 A
dI
F
/dt = 80 A/µs
V
FR
= 2 V
I
F
= 6 A
dI
F
/dt = 80 A/µs
I
F
= 6 A
dI
F
/dt = 80 A/µs
Value
Typ.
T
j
= 100°C
330
Max.
470
ns
T
j
= 100°C
85
125
Unit
Damper
t
fr
Forward recovery time
Modul.
Damper
V
FP
Peak forward voltage
Modul.
T
j
= 100°C
T
j
= 100°C
21
5
29
V
7.5
Figure 1: Power dissipation versus peak
forward current (triangular waveform,
δ=0.45)
P
F(AV)
(W)
4.5
4.0
3.5
Figure 2: Average forward current versus
ambient temperature
I
F(AV)
(A)
7
R
th(j-a)
=R
th(j-c)
6
5
DAMPER diode
3.0
2.5
2.0
1.5
MODULATION diode
DAMPER diode
MODULATION diode
4
3
2
1
1.0
0.5
0.0
0
1
2
3
4
5
6
7
8
9
10
11
12
T
I
P
(A)
0
0
δ
=tp/T
25
tp
50
T
amb
(°C)
75
100
125
150
Figure 3: Forward voltage drop versus forward
current (damper diode)
I
FM
(A)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
T
j
=125°C
(typical values)
T
j
=25°C
(maximum values)
T
j
=125°C
(maximum values)
Figure 4: Forward voltage drop versus forward
current (modulation diode)
I
FM
(A)
10
9
8
7
6
5
4
3
2
T
j
=25°C
(maximum values)
T
j
=125°C
(typical values)
T
j
=125°C
(maximum values)
V
FM
(V)
1
0
0.2
0.4
0.6
0.8
1.0
V
FM
(V)
1.2
1.4
1.6
1.8
3/8
DMV1500HD
Figure 5: Relative variation of thermal
impedance junction to case versus pulse
duration
Z
th(j-c)
/R
th(j-c)
1.0
0.9
0.8
3.0
0.7
0.6
MODULATION diode
DAMPER diode
Figure 6: Reverse recovery charges versus
dI
F
/dt (damper diode, typical values)
Q
rr
(µC)
4.0
3.5
I
F
=I
P
T
j
=125°C
2.5
2.0
1.5
1.0
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0.5
t
p
(s)
Single pulse
dI
F
/dt(A/µs)
0.0
0.1
1.0
10.0
100.0
Figure 7: Reverse recovery charges versus
dI
F
/dt (modulation diode, typical values)
Q
rr
(nC)
300
I
F
=I
P
T
j
=125°C
Figure 8: Peak reverse recovery current versus
dI
F
/dt (damper diode, typical values)
I
RM
(A)
5.0
4.5
4.0
3.5
3.0
I
F
=I
P
T
j
=125°C
250
200
150
2.5
2.0
100
1.5
1.0
50
dI
F
/dt(A/µs)
0
0.1
1.0
10.0
100.0
0.5
0.0
0.1
dI
F
/dt(A/µs)
1.0
10.0
Figure 9: Peak reverse recovery current versus
dI
F
/dt (modulation diode, typical values)
I
RM
(A)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
F
=I
P
T
j
=125°C
Figure 10: Transient peak forward voltage
versus dI
F
/dt (damper diode, typical values)
V
FP
(V)
40
35
30
25
20
15
10
5
I
F
=I
P
T
j
=100°C
dI
F
/dt(A/µs)
0.0
0.1
1.0
10.0
100.0
dI
F
/dt(A/µs)
0
0
20
40
60
80
100
120
140
160
180
200
4/8
DMV1500HD
Figure 11: Transient peak forward voltage
versus dI
F
/dt (modulation diode, typical
values)
V
FP
(V)
10
9
8
7
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
160
180
200
I
F
=I
P
T
j
=100°C
Figure 12: Forward recovery time versus dI
F
/dt
(damper diode, typical values)
t
fr
(ns)
600
550
500
450
400
350
300
250
200
150
100
I
F
=I
P
V
FR
=3.0V
T
j
=100°C
dI
F
/dt(A/µs)
50
0
0
20
40
60
dI
F
/dt(A/µs)
80
100
120
140
160
180
200
Figure 13: Forward recovery time versus dI
F
/dt
(modulation diode, typical values)
t
fr
(ns)
140
120
100
I
F
=I
P
V
FR
=2.0V
T
j
=100°C
Figure 14: Relative variation of dynamic
parameters versus junction temperature
I
RM
, V
FP
, Q
RR
[T
j
]/ I
RM
, V
FP
, Q
RR
[T
j
=125°C]
1.2
1.0
0.8
80
0.6
60
0.4
40
Q
RR
I
RM
V
FP
20
0.2
dI
F
/dt(A/µs)
0
0
20
40
60
80
100
120
140
160
180
200
0.0
25
50
T
j
(°C)
75
100
125
Figure 15: Junction capacitance versus
reverse voltage applied (typical values)
C(pF)
100
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
DAMPER diode
10
MODULATION diode
V
R
(V)
1
1
10
100
1000
5/8
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