PD - 97186
PDP TRENCH IGBT
Features
l
Advanced Trench IGBT Technology
l
Optimized for Sustain and Energy Recovery
circuits in PDP applications
TM
)
l
Low V
CE(on)
and Energy per Pulse (E
PULSE
for improved panel efficiency
l
High repetitive peak current capability
l
Lead Free package
IRGI4055PbF
Key Parameters
300
1.10
220
150
V
V
A
°C
V
CE
min
V
CE(ON)
typ. @ 36A
I
RP
max @ T
C
= 25°C
c
T
J
max
C
G
E
E
C
G
n-channel
G
Gate
C
Collector
TO-220AB
Full-Pak
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V
CE(on)
and low E
PULSETM
rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
V
GE
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
RP
@ T
C
= 25°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Gate-to-Emitter Voltage
Continuous Collector Current, V
GE
@ 15V
Continuous Collector, V
GE
@ 15V
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
10lb in (1.1N m)
Max.
±30
36
18
220
46
19
0.37
-40 to + 150
300
Units
V
A
c
W
W/°C
°C
x
x
N
Thermal Resistance
R
θJC
Junction-to-Case
d
Parameter
Typ.
–––
Max.
2.7
Units
°C/W
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1
02/17/06
IRGI4055PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
CES
V
(BR)ECS
∆ΒV
CES
/∆T
J
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltagee
Breakdown Voltage Temp. Coefficient
Min.
300
18
–––
–––
–––
Typ. Max. Units
–––
–––
0.23
0.95
1.10
1.65
1.90
2.30
–––
-11
2.0
100
–––
–––
38
132
42
–––
705
915
4280
200
125
5.0
13
–––
–––
–––
–––
1.35
–––
–––
–––
5.0
–––
25
–––
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nH
–––
pF
ns
µJ
S
nC
nA
V
mV/°C
µA
V
V
Conditions
V
GE
= 0V, I
CE
= 1 mA
V
GE
= 0V, I
CE
= 1 A
V/°C Reference to 25°C, I
CE
= 1mA
V
GE
= 15V, I
CE
= 18A
e
V
GE
= 15V, I
CE
= 36A
e
V
V
GE
= 15V, I
CE
= 110A
e
V
GE
= 15V, I
CE
= 150A
e
V
GE
= 15V, I
CE
= 150A, T
J
= 150°C
V
CE
= V
GE
, I
CE
= 1mA
V
CE
= 300V, V
GE
= 0V
V
CE
= 300V, V
GE
= 0V, T
J
= 150°C
V
GE
= 30V
V
GE
= -30V
V
CE
= 25V, I
CE
= 36A
V
CE
= 200V, I
C
= 36A, V
GE
= 15Ve
V
CC
= 240V, V
GE
= 15V, R
G
= 5.1Ω
L = 220nH, C= 0.40µF, V
GE
= 15V
V
CC
= 240V, R
G
= 5.1Ω, T
J
= 25°C
L = 220nH, C= 0.40µF, V
GE
= 15V
V
CC
= 240V, R
G
= 5.1Ω, T
J
= 100°C
V
GE
= 0V
V
CE
= 30V
ƒ = 1.0MHz,
Between lead,
6mm (0.25in.)
from package
and center of die contact
See Fig.13
V
CE(on)
Static Collector-to-Emitter Voltage
–––
–––
–––
V
GE(th)
∆V
GE(th)
/∆T
J
I
CES
I
GES
g
fe
Q
g
Q
gc
t
st
E
PULSE
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Shoot Through Blocking Time
Energy per Pulse
2.6
–––
–––
–––
–––
–––
–––
–––
–––
100
–––
–––
C
iss
C
oss
C
rss
L
C
L
E
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Collector Inductance
Internal Emitter Inductance
–––
–––
–––
–––
–––
Notes:
Half sine wave with duty cycle = 0.10, ton=2µsec.
R
θ
is measured at
T
J
of approximately 90°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRGI4055PbF
200
Top
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
V
= 6.0V
GE
200
Top
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
V
= 6.0V
GE
150
Bottom
150
Bottom
ICE (A)
ICE (A)
100
100
50
50
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V CE (V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V CE (V)
Fig 1. Typical Output Characteristics @ 25°C
200
Top
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
V
= 6.0V
GE
Fig 2. Typical Output Characteristics @ 75°C
200
Top
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
V
= 6.0V
GE
150
Bottom
150
Bottom
ICE (A)
ICE (A)
100
100
50
50
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V CE (V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V CE (V)
Fig 3. Typical Output Characteristics @ 125°C
300
IC, Collector-to-Emitter Current (A)
Fig 4. Typical Output Characteristics @ 150°C
20
T J = 25°C
250
200
150
100
5
IC = 36A
15
T J = 150°C
VCE (V)
10
T J = 25°C
T J = 150°C
50
10µs PULSE WIDTH
0
0
5
10
15
VGE, Gate-to-Emitter Voltage (V)
0
5
10
VGE (V)
15
20
Fig 5. Typical Transfer Characteristics
Fig 6. V
CE(ON)
vs. Gate Voltage
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IRGI4055PbF
40
35
IC, Collector Current (A)
240
220
200
Repetitive Peak Current (A)
ton= 2µs
Duty cycle <= 0.10
Half Sine Wave
30
25
20
15
10
5
0
0
25
50
75
100
125
150
180
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
Case Temperature (°C)
Fig 7. Maximum Collector Current vs. Case Temperature
1000
900
Energy per Pulse (µJ)
T C, Case Temperature (°C)
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
1000
V CC = 240V
L = 220nH
C = variable
Energy per Pulse (µJ)
900
800
700
L = 220nH
C = 0.4µF
800
700
600
25°C
500
400
300
160
170
180
190
200
210
220
230
100°C
100°C
600
500
25°C
400
300
200
150 160 170 180 190 200 210 220 230 240
V CE, Collector-to-Emitter Voltage (V)
Ic , Peak Collector Current (A)
Fig 9. Typical E
PULSE
vs. Collector Current
1200
V CC = 240V
1000
Energy Pulse (µJ)
Fig 10. Typical E
PULSE
vs. Collector-to-Emitter Voltage
1000
L = 220nH
t = 1µs half sine
C= 0.4µF
OPERATION IN THIS AREA
LIMITED BY V CE(on)
100
1µsec
10µsec
800
C= 0.3µF
600
C= 0.2µF
400
IC (A)
100µsec
10
200
25
50
75
100
125
150
TJ, Temperature (ºC)
1
1
10
VCE (V)
100
1000
Fig 11. E
PULSE
vs. Temperature
Fig 12. Forrward Bias Safe Operating Area
4
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IRGI4055PbF
100000
VGS = 0V,
f = 1 MHZ
C ies = C ge + C gd, C ce SHORTED
C res = C gc
C oes = C ce + C gc
16
VGE, Gate-to-Emitter Voltage (V)
14
12
10
8
6
4
2
0
IC = 30A
IC = 36A
10000
Capacitance (pF)
Cies
1000
100
Coes
Cres
10
0
50
100
150
200
0
25
50
75
100
125
150
V CE, Collector-toEmitter-Voltage(V)
Q G, Total Gate Charge (nC)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
Thermal Response ( Z thJC )
1
0.1
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ri (°C/W)
0.2933
1.1021
1.3046
τi
(sec)
0.00049
0.190978
2.786
τ
1
τ
2
0.001
Ci=
τi/Ri
Ci
τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1
10
100
0.0001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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