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JANSF2N7470T1

Description
45 A, 60 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
CategoryDiscrete semiconductor    The transistor   
File Size172KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

JANSF2N7470T1 Overview

45 A, 60 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA

JANSF2N7470T1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Parts packaging codeTO-254AA
package instructionFLANGE MOUNT, S-XSFM-P3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)824 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)45 A
Maximum drain-source on-resistance0.006 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-XSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)180 A
Certification statusNot Qualified
GuidelineMIL-19500/698
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD-95838B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHMS57064 100K Rads (Si) 0.0066Ω 45A*
IRHMS53064 300K Rads (Si) 0.0066Ω 45A*
IRHMS54064
500K Rads (Si)
0.0066Ω 45A*
IRHMS58064 1000K Rads (Si)
IRHMS57064
JANSR2N7470T1
60V, N-CHANNEL
REF: MIL-PRF-19500/698
5

TECHNOLOGY
™
QPL Part Number
JANSR2N7470T1
JANSF2N7470T1
JANSG2N7470T1
0.0066Ω 45A* JANSH2N7470T1
Low-Ohmic
TO-254AA
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
45*
45*
180
208
1.67
±20
824
45
20
4.3
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
www.irf.com
1
07/24/06

JANSF2N7470T1 Related Products

JANSF2N7470T1 JANSG2N7470T1 JANSR2N7470T1 JANSH2N7470T1
Description 45 A, 60 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA 45 A, 60 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA 45 A, 60 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA 45 A, 60 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
Is it lead-free? Contains lead Contains lead Contains lead Contains lead
Parts packaging code TO-254AA TO-254AA TO-254AA TO-254AA
package instruction FLANGE MOUNT, S-XSFM-P3 FLANGE MOUNT, S-CSFM-P3 FLANGE MOUNT, S-CSFM-P3 FLANGE MOUNT, S-CSFM-P3
Contacts 3 3 3 3
Reach Compliance Code unknow compli compliant compli
ECCN code EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 824 mJ 824 mJ 824 mJ 824 mJ
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V 60 V
Maximum drain current (ID) 45 A 45 A 45 A 45 A
Maximum drain-source on-resistance 0.006 Ω 0.0066 Ω 0.0066 Ω 0.0066 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-254AA TO-254AA TO-254AA TO-254AA
JESD-30 code S-XSFM-P3 S-CSFM-P3 S-CSFM-P3 S-CSFM-P3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material UNSPECIFIED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape SQUARE SQUARE SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 180 A 180 A 180 A 180 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Guideline MIL-19500/698 MIL-19500 MIL-19500 MIL-19500
surface mount NO NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Maximum operating temperature 150 °C - 150 °C 150 °C
Base Number Matches 1 - 1 1
Is it Rohs certified? - incompatible incompatible incompatible
JESD-609 code - e0 e0 e0
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