Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com
*
www.ssdi-power.com
SFT3439S.22
1 A /450 Volts
NPN Switching Transistor
Features:
•
Switching Transistor
•
Small Footprint Surface Mount Device with Excellent
Thermal Properties
•
Replacement/Enhancement for 2N3439UA
•
TX, TXV, S-Level Screening Available
•
PNP Complimentary Parts Available
DESIGNER’S DATA SHEET
SMD.22
Maximum Ratings
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Continuous Collector Current
Power Dissipation @ T
C
= 25ºC
Power Dissipation @ T
C
= 25ºC
Operating & Storage Temperature
Maximum Thermal Resistance
Note1: Derated 133 mW/°C above T
c
= 162.5°C
Note2: Derated 4 mW/°C above T
A
= 25°C
Note 1
Note 2
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
Top & Tstg
Junction to Case
Junction to Ambient
R
θJC
R
θJA
Value
350
450
7
1
5
0.7
-65 to +200
7.5 (typ 5)
250
Units
Volts
Volts
Volts
Amps
W
ºC
ºC/W
PIN 1= COLLECTOR; PIN 2= EMITTER; PIN 3= BASE
.220±.007
.065±.010
3
.134 .030
1
2
.140
.150
±.007
.052
.070
.090
.005 TYP
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0086A
DOC
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT3439S.22
Symbol
V
CB
= 360 V
V
CB
= 450 V
V
CB
= 360 V, T
A
= 150ºC
V
CE
= 300 V
V
CE
= 450 V, V
BE
= 1.5 V
V
EB
= 7.0 V
V
CE
= 10V, I
C
= 0.2 mA
V
CE
= 10V, I
C
= 2 mA
V
CE
= 10V, I
C
= 20 mA
I
CBO1
I
CBO2
I
CBO3
I
CEO
I
CEX1
I
EBO
H
FE1
H
FE2
H
FE4
H
FE4
V
CE(sat)1
V
BE(sat)1
h
fe
h
fe
C
obo
C
ibo
t
on
t
off
SOA1
SOA2
Electrical Characteristics
4/
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Forward Current
Transfer Ratio *
Min
––
––
––
––
––
––
10
30
40
15
––
––
3
25
––
––
––
––
Typ
0.05
0.1
––
0.02
––
0.01
65
90
115
30
0.23
0.75
5.5
110
8
35
––
––
Max
2
5
100
2
5
10
––
––
160
––
0.5
1.3
15
––
10
75
1
10
Units
µA
µA
µA
µA
V
CE
= 10V, I
C
= 20mA, Ta= -55ºC
Collector to Emitter
Saturation Voltage
Base to Emitter
Saturation Voltage
Frequency Transition
(Small Signal Current Gain)
@ f= 5 MHz
Small Signal Current Gain
@ f= 1 kHz
Output Capacitance
Input Capacitance
Pulse Response
Safe Operating Area
I
C
= 50 mA, I = 4 mA
I
C
= 50 mA, I
B
= 4 mA
V
CE
= 10V, I
C
= 10mA, f = 5 MHz
V
CE
= 10V, I
C
= 5mA, f = 1 kHz
V
CB
= 10V, f = 1MHz
V
BE
= 5V, f = 1MHz
V
CC
= 200V, I
C
= 20mA, I
B
= 2mA
V
CE
= 5V, I
C
= 1A, t = 1 s
V
CE
= 350V, I
C
= 14 mA, t = 1 s
V
V
pF
pF
µs
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, Availability Contact
Factory.
2/ Screening per MIL-PRF-19500
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0086A
DOC
京公网安备 11010802033920号
EEWORLD
