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SFT4959

Description
30mA 18 VOLTS PNP TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size21KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SFT4959 Overview

30mA 18 VOLTS PNP TRANSISTOR

SFT4959 Parametric

Parameter NameAttribute value
MakerSSDI
package instructionCYLINDRICAL, O-MBCY-W4
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.03 A
Collector-based maximum capacity0.8 pF
Collector-emitter maximum voltage18 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-72
JESD-30 codeO-MBCY-W4
Number of components1
Number of terminals4
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)1000 MHz
Base Number Matches1
PRELIMINARY
SFT4959
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
Designer's Data Sheet
FEATURES:
PNP Silicon Annular Transistor
High Speed
High Frequency
Low Noise
30mA
18 VOLTS
PNP TRANSISTOR
TO-72
Maximum Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation @ TC=100
o
C
Derate above 100
o
C
Operating and Storage Temperature
Thermal Resistance, Junction to Case
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
P
D
T
J,
T
STG
R
2JC
VALUE
18
25
3
30
.2
1.14
-65 to +200
.87
UNITS
Volts
Volts
Volts
mA
W
mW/
o
C
o
C
o
C/mW
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0001A

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