TetraFET
D5007UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A
B
C
1
2
D
E
4
M
3
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
150W – 50V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
F
G
H
K
I
J
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C
rss
• SIMPLE BIAS CIRCUITS
• HIGH GAIN – 13 dB MINIMUM
PIN 1
PIN 3
SOURCE
SOURCE
PIN 2
PIN 4
DRAIN
GATE
DIM
mm
A
28.83
B
21.97
C
45°
D
6.86
E
3.43 Dia.
F
5.84
G 13.97 Dia.
H
6.60
I
0.13
J
4.06
K
2.54
M
6.35
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
Inches
1.135
0.865
45°
0.270
0.135 Dia.
0.230
0.550 Dia.
0.260
0.005
0.16
0.100
1.10
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.005
REF
0.001
0.01
0.005
0.02
APPLICATIONS
•
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
350W
125V
±20V
21A
–65 to 150°C
200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5287
Issue 2
D5007UK
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BV
DSS
I
DSS
I
GSS
g
fs
G
PS
η
C
iss
C
oss
C
rss
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0
V
DS
= 50V
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 150W
V
DS
= 50V
f = 175MHz
V
DS
= 50V
V
DS
= 50V
V
DS
= 50V
V
GS
= –5V f = 1MHz
V
GS
= 0
V
GS
= 0
f = 1MHz
f = 1MHz
I
DQ
= 0.7A
I
D
= 100mA
V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 3.5A
1
5.6
13
40
20:1
125
Typ.
Max. Unit
V
7
1
7
mA
µA
V
S
dB
%
—
420
175
10.5
pF
pF
pF
V
GS(th)
Gate Threshold Voltage*
VSWR Load Mismatch Tolerance
* Pulse Test:
Pulse Duration = 300
µs
, Duty Cycle
≤
2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case
Max. 0.6°C / W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5287
Issue 2
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