RazerThin
®
LEDs
CxxxRT290-S0200
Cree’s RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity blue and green
LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward
voltage. Cree’s RazerThin series chips have the ability to withstand 1000V ESD. Applications for RazerThin LEDs
include next-generation keypad backlighting where sub-miniaturization and thinner form factors are required.
FEATURES
•
•
•
Thin 95 μm Chip
Reduced Forward Voltage
–
–
–
–
–
•
•
3.2 V Typical at 20 mA
460nm - 3.8-11.1 mW
470nm - 3.4-10.4 mW
505nm - 2.0-6.5 mW
527nm - 1.7-6.0 mW
RazerThin LED Performance
APPLICATIONS
•
Mobile Phone Key Pads
–
–
–
•
•
•
•
•
White LEDs
Blue LEDs
Green LEDs
Cellular Phone LCD Backlighting
Digital Camera Flash For Mobile Appliances
Automotive Dashboard Lighting
LED Video Displays
Audio Product Display Lighting
Single Wire Bond Structure
Class 2 ESD Rating
CxxxRT290-S0200 Chip Diagram
Top View
G•SiC LED Chip
270 x 270 μm
Mesa (junction)
246 x 246 μm
Gold Bond Pad
110 μm Diameter
Bottom View
Die Cross Section
B
PR3CL, Rev.
Datasheet: C
Anode (+)
SiC Substrate
h = 95 μm
Backside
Metallization
Cathode (-)
InGaN
Subject to change without notice.
www.cree.com
Maximum Ratings at T
A
= 25°C
Notes &3
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
Note 2
Note 2
CxxxRT290-S0200
30 mA
100 mA
125°C
5V
-40°C to +100°C
-40°C to +100°C
1000 V
Class 2
Note 3
Electrostatic Discharge Classification (MIL-STD-883E)
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 20 mA
Part Number
Forward Voltage (V
f
, V)
Min.
Typ.
3.2
3.2
3.2
3.2
Max.
3.7
3.7
3.7
3.7
Reverse Current
[I(Vr=5V), μA]
Max.
1
1
1
1
CxxxRT290-S0200
Dimension
246 x 246
270 x 270
270 x 270
95
110
1.2
20
Tolerance
± 25
± 25
± 25
± 15
± 20
± 0.5
± 10
C460RT290-S0200
C470RT290-S0200
C505RT290-S0200
C527RT290-S0200
Mechanical Specifications
Description
P-N Junction Area (μm)
Top Area (μm)
Bottom Area (μm)
Chip Thickness (μm)
Au Bond Pad Diameter (μm)
Au Bond Pad Thickness (μm)
Back Contact Metal Width (μm)
2.7
2.7
2.7
2.7
Notes:
1.
2.
3.
4.
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy)
for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller.
The forward currents (DC and Peak) are not limited by the G•SiC die but by the effect of the LED junction temperature on the
package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized
in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET).
The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding
the ability of Products to withstand ESD.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances
products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages (with Hysol
OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E.
Specifications are subject to change without notice.
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3CL Rev. B
Standard Bins for CxxxRT290-S0200
All LED chips are sorted onto die sheets according to the bins shown below. All dominant wavelength and radiant flux
values are specified at If = 20 mA.
11.1 mW
Radiant Flux
7.2 mW
C460RT290-0205
C460RT290-0201
C460RT290-S0200
C460RT290-0206
C460RT290-0202
C460RT290-0207
C460RT290-0203
C460RT290-0208
C460RT290-0204
3.8 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
C470RT290-S0200
462.5 nm
465 nm
10.4 mW
Radiant Flux
6.7 mW
C470RT290-0205
C470RT290-0201
C470RT290-0206
C470RT290-0202
C470RT290-0207
C470RT290-0203
C470RT290-0208
C470RT290-0204
3.4 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
C505RT290-S0200
472.5 nm
475 nm
6.5 mW
Radiant Flux
4.0 mW
C505RT290-0203
C505RT290-0201
C505RT290-0204
C505RT290-0202
2.0 mW
500 nm
505 nm
Dominant Wavelength
C527RT290-S0200
510 nm
Radiant Flux
6.0 mW
3.5 mW
C527RT290-0204
C527RT290-0201
C527RT290-0205
C527RT290-0202
C527RT290-0206
C527RT290-0203
1.7 mW
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3CL Rev. B
Characteristic Curves
These are representative measurements for the RazerThin products. Actual curves will vary slightly for the various
radiant flux and dominant wavelength bins.
Wavelength Shift vs Forward Current
12.00
Forward Current vs. Forward Voltage
30
10.00
25
8.00
460nm
20
6.00
Shift (nm)
527nm
If (mA)
505nm
4.00
15
2.00
10
0.00
5
-2.00
0
5
10
15
20
25
30
0
0.0
0.5
1.0
1.5
2.0
2.5
Vf (V)
3.0
3.5
4.0
4.5
5.0
-4.00
If (mA)
Relative Intensity vs Forward Current
140
100
Relative Intensity vs Peak Wavelength
120
80
Relative Intensity (%)
100
% Intensity
60
80
60
40
40
20
20
0
400
0
5
10
15
If(mA)
20
25
30
500
Wavelength (nm)
600
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3CL Rev. B
京公网安备 11010802033920号
EEWORLD
