UM9301/UM9301SM
Commercial Attenuator Diode
P
RODUCT
P
REVIEW
DESCRIPTION
KEY FEATURES
W W W.
Microsemi
.COM
The UM9301 PIN Diode utilizes special
overall chip geometry with an extremely
thick intrinsic “I” region, to offer unique
capabilities in both RF switch and
attenuator applications.
Volume production also makes the diode
an economical choice suitable for many
commercial low power equipments.
The UM9301 has been designed for use
in bridged TEE attenuator circuits
commonly utilized for gain and slope
control in CATV amplifiers.
Low distortion and high dynamic range are
characteristic of the diodes’ outstanding
performance.
The UM9301 is also appropriate for
switch applications, when little or no bias
voltage is available. Frequent applications
occur in portable 12 volt-powered
communications equipments, operating at
frequencies as low as 2 MHz.
Specified low distortion
Low distortion properties at low
reverse bias
Resistance specified at 3 current
points
High reliability fused-in-glass
construction
APPLICATIONS/BENEFITS
APPLICATIONS/BENEFITS
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Reverse Voltage
Reverse Current
Average Power Dissipation (1, 2)
Storage Temperature
Operating Temperature
Symbol
V
R
I
R
P
A
T stg
T op
Value
75
10
1.0
-65 to 175
-65 to 175
Unit
Volts
µA
Watts
ºC
ºC
Little or no Bias required.
Operates as low as 2MH
Z
.
Available in leaded or surface
mount packages.
UM9301SM
UM9301
UM9301SM
(1) Mounted on 2” square by 0.06’ thick FR4 board with a 1” x 1” square 2-ounce copper pattern..
(2) Lead ½ inch. (12.7mm) Total to 25°C Contact.
UM9301/UM9301SM
UM9301/UM9301SM
Copyright
2005
Rev.
A,
2005-07-05
Microsemi
75 Technology Drive, Lowell,
MA. 01851,
978-442-5600,
Fax:
978-937-3748
Page 1
UM9301/UM9301SM
Commercial Attenuator Diode
P
RODUCT
P
REVIEW
ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)
W W W.
Microsemi
.COM
Parameter
Off Characteristics
Symbol
R
S
R
S
I
Conditions
I
= 100 mA; f = 100 MH
Z
I
= 1 mA; f = 100 MH
Z
I
= 0.01 mA; f = 100 MH
Z
f = 100 MH
Z
Frequency Range: 10-300MH
Z
R
S
= 75
Ω
@ 100MH
Z
Diode Terminates 75
Ω
line
f
1
= 10 MH
Z
; f
2
= 13 MH
Z
P = 50 dBmV; See Test Circuit
F
1
= 67 MH
Z
; f
2
= 77 MH
Z
P = 50 dBmV; See Test Circuit
F
1
= 10 MH
Z
; F
2
= 13 MH
Z
P = 50 dBmV; See Test Circuit
Triple Beat; 205 +67 –77MH
Z
P = 50 dBmV; See Test Circuit
12 Channel Test
P = 50 dBmV; See Test Circuit
Dix Hills Test Set
V = 75 V
I
= 10 mA
V = 0V; f = 100 MH
Z
Min
Typ.
1.7
80
5000
1.1
Max
3.0
150
2.0
Units
Ω
mA
dB
Diode Resistance
Current for R
S
= 75
Ω
I
R
Return Loss
3000
0.5
25
55
70
75
95
75
50
-dB
-dB
Second Order Distortion
V
65
-dB
-dB
-dB
Third Order Distortion
Cross Modulation
Distortion
Reverse Current
Carrier Lifetime
Dynamic characteristics
V
V
I
R
τ
C
T
10
4.0
0.8
µA
µs
pF
Capacitance
ELECTRICAL
ELECTRICAL
PRODUCT PRELIMINARY DATA – Information contained in this document is pre-production
data, and is proprietary to Microsemi Corp. It may not be modified in any way without the express
written consent of Microsemi Corp. Product referred to herein is not guaranteed to achieve
preliminary or production status and product specifications, configurations, and availability may
change at any time.
Copyright
2005
Rev. A, 2005-07-05
Microsemi
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
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