BULD1101E
High voltage fast-switching NPN Power Transistor
General features
■
■
■
■
■
High voltage capability
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
In compliance with the 2002/93/EC European
Directive
3
1
DPAK
TO-252
IPAK
TO-251
1
2
3
Description
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
Internal schematic diagram
Applications
■
Electronic ballast for fluorescent lighting
Order codes
Part number
BULD1101ET4
BULD1101E-1
Marking
BULD1101E
BULD1101E
Package
DPAK
IPAK
Packaging
Tape & reel
Tube
May 2007
Rev 2
1/11
www.st.com
11
Electrical ratings
BULD1101E
1
Electrical ratings
Table 1.
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
J
Absolute maximum rating
Parameter
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5ms)
Base current
Base peak current (t
P
< 5ms)
Total dissipation at T
c
= 25°C
Storage temperature
Max. operating junction temperature
Value
1100
450
12
3
6
1.5
3
35
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
°C
°C
Table 2.
Symbol
R
thj-case
R
thj-amb
Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-amb
__max
__max
Value
3.57
100
Unit
°C/W
°C/W
2/11
BULD1101E
Electrical characteristics
2
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 3.
Symbol
I
CES
Electrical characteristics
Parameter
Test conditions
Min. Typ. Max.
100
Unit
µA
Collector cut-off current
V
CE
=1100V
(V
BE
=0V)
Emitter-base
breakdown voltage (I
C
= I
E
=1mA
0)
I
C
=100mA
450
I
C
=1A
I
C
=1A
I
C
=1A
I
B
=0.2A
I
B
=0.2A
I
B
=0.2A
20
23
6
4
38
44
10
7
T
J
=125°C
0.25
0.6
12
V
(BR)EBO
24
V
Collector-emitter
V
CEO(sus) (1)
sustaining voltage
(I
B
= 0)
V
CE(sat) (1)
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
V
1
1.5
1.5
80
85
18
16
V
V
V
V
BE(sat) (1)
h
FE
DC current gain
I
C
=0.25A V
CE
=5V
I
C
=0.25A V
CE
=5V T
J
=125°C
V
CE
=5V
I
C
=2A
I
C
=2A
V
CE
=5V T
J
=125°C
I
C
=2.5A
V
CC
=125V
V
BE(off)
=-5V
L =2mH
I
BR
≤2.5A
t
s
t
f
E
ar
Resistive load
Storage time
Fall time
Repetitive avalanche
energy
I
B1
= -I
B2
=0.5A t
p
= 300µs
(see fig.10)
C =1.8nF
(see fig.11)
6
400
2
700
µs
ns
mJ
Note (1) Pulsed duration = 300µs, duty cycle
≤1.5%
3/11
Renesas Electronics MCUs
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