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30EPF06PBF

Description
30 A, 600 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size212KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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30EPF06PBF Overview

30 A, 600 V, SILICON, RECTIFIER DIODE

30EPF06PBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionR-PSIP-T2
Reach Compliance Codecompliant
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.41 V
JESD-30 codeR-PSIP-T2
JESD-609 codee3
Maximum non-repetitive peak forward current315 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current30 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)250
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.16 µs
surface mountNO
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
Base Number Matches1
Bulletin I2169 10/04
QUIET
IR
Series
30EPF06PbF, 30CPF06PbF
FAST SOFT RECOVERY
RECTIFIER DIODE
Lead-Free ("PbF" suffix)
V
F
t
rr
< 1.2V @ 10A
= 60ns
V
RRM
= 600V
Description/ Features
The 30EPF06PbF & 30CPF06PbF soft recovery
QUIET
IR
rectifier series has been optimized for
combined short reverse recovery time and low forward
voltage drop.
The glass passivation ensures stable reliable operation
in the most severe temperature and power cycling
conditions.
Typical applications are:
Output rectification and freewheeling in
inverters, choppers and converters
and input rectifications where severe
restrictions on conducted EMI should be met.
30CPF series is a drop in replacement
for 25CPF Series (parallel connection only)
Major Ratings and Characteristics
Characteristics
I
F(AV)
Sinusoidal waveform
V
RRM
I
FSM
V
F
trr
T
J
@ 10 A, T
J
= 25°C
@ 1A, 100A/µs
Package Outline
Units
A
V
A
V
ns
°C
Values
30
600
350
1.2
60
- 40 to 150
30EPF..
30CPF..
TO-247AC (Modified)
www.irf.com
1

30EPF06PBF Related Products

30EPF06PBF 30CPF06PBF
Description 30 A, 600 V, SILICON, RECTIFIER DIODE 30 A, 600 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? conform to conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction R-PSIP-T2 R-PSIP-T3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
application FAST RECOVERY FAST RECOVERY
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.41 V 1.41 V
JESD-30 code R-PSIP-T2 R-PSIP-T3
JESD-609 code e3 e3
Maximum non-repetitive peak forward current 315 A 315 A
Number of components 1 1
Phase 1 1
Number of terminals 2 3
Maximum operating temperature 150 °C 150 °C
Maximum output current 30 A 30 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) 250 250
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 600 V 600 V
Maximum reverse recovery time 0.16 µs 0.16 µs
surface mount NO NO
Terminal surface MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 30
Base Number Matches 1 1

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