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BSN20_00

Description
N-channel enhancement mode field-effect transistor
File Size136KB,13 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet View All

BSN20_00 Overview

N-channel enhancement mode field-effect transistor

BSN20
N-channel enhancement mode field-effect transistor
Rev. 03 — 26 June 2000
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™
1
technology.
Product availability:
BSN20 in SOT23.
2. Features
s
s
s
s
TrenchMOS™ technology
Very fast switching
Logic level compatible
Subminiature surface mount package.
3. Applications
s
Relay driver
s
High speed line driver
s
Logic level translator.
c
c
4. Pinning information
Table 1:
Pin
1
2
3
Pinning - SOT23, simplified outline and symbol
Description
gate (g)
3
Simplified outline
Symbol
d
source (s)
drain (d)
g
03ab44
1
2
s
03ab30
SOT23
N-channel MOSFET
1.
TrenchMOS is a trademark of Royal Philips Electronics.
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Index Files: 201  2496  268  1383  1347  5  51  6  28  58 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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