Pb Free Plating Product
ISSUED DATE :2006/02/21
REVISED DATE :
GJ08P10
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-100V
200m
-8A
Description
The GJ08P10 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications.
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
*RoHS Compliant
Features
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@10V
Continuous Drain Current, V
GS
@10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Current
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
C
=25 :
I
D
@T
C
=100 :
I
DM
P
D
@T
C
=25 :
E
AS
I
AR
Tj, Tstg
Ratings
-100
±32
-8
-6
-32
45
0.36
100
-8
-55 ~ +150
Unit
V
V
A
A
A
W
W/ :
mJ
A
:
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
2.8
110
Unit
:
/W
: /W
GJ08P10
Page: 1/4
ISSUED DATE :2006/02/21
REVISED DATE :
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol
BV
DSS
BV
DSS
/
Tj
Min.
-100
-
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.096
-
8
-
-
-
-
-
16
4.4
8.7
9
14
45
40
1590
110
70
8
Max.
-
-
-3.0
-
±100
-1
-25
200
250
25.6
-
-
-
-
-
-
2550
-
-
12
Unit
V
V/ :
V
S
nA
uA
uA
m
Test Conditions
V
GS
=0, I
D
=-250uA
Reference to 25 : , I
D
=-1mA
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-6A
V
GS
= ±32V
V
DS
=-100V, V
GS
=0
V
DS
=-80V, V
GS
=0
V
GS
=-10V, I
D
=-6A
V
GS
=-4.5V, I
D
=-4A
I
D
=-6A
V
DS
=-80V
V
GS
=-4.5V
V
DS
=-50V
I
D
=-6A
V
GS
=-10V
R
G
=3.3
R
D
=6.25
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=
150 :
)
V
GS(th)
g
fs
I
GSS
I
DSS
Static Drain-Source On-Resistance
3
Total Gate Charge
3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
R
g
nC
ns
pF
Source-Drain Diode
Parameter
Forward On Voltage
3
Reverse Recovery Time
3
Reverse Recovery Charge
Symbol
V
SD
T
rr
Q
rr
Min.
-
-
-
Typ.
-
49
11
Max.
-1.7
-
-
Unit
V
ns
nC
Test Conditions
I
S
=-8A, V
GS
=0V
I
S
=-6A, V
GS
=0V
dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 : , V
DD
=-50V, L=13mH, R
G
=25 , I
AS
=-3.9A.
3. Pulse width 300us, duty cycle 2%.
GJ08P10
Page: 2/4
ISSUED DATE :2006/02/21
REVISED DATE :
Characteristics Curve
C
C
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
-8
-6
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GJ08P10
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4
ISSUED DATE :2006/02/21
REVISED DATE :
-
6
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ08P10
Page: 4/4
京公网安备 11010802033920号
EEWORLD
