EEWORLDEEWORLDEEWORLD

Part Number

Search

1N6269/62

Description
Trans Voltage Suppressor Diode, 1500W, 6.63V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE 1.5KE, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size119KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

1N6269/62 Overview

Trans Voltage Suppressor Diode, 1500W, 6.63V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE 1.5KE, 2 PIN

1N6269/62 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionO-PALF-W2
Contacts2
Manufacturer packaging codeCASE 1.5KE
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage9.02 V
Minimum breakdown voltage7.38 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation6.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage6.63 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case:
Molded epoxy body over passivated junction
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
Case Style 1.5KE
PRIMARY CHARACTERISTICS
V
BR
uni-directional
V
BR
bi-directional
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
6.8 V to 540 V
6.8 V to 440 V
1500 W
6.5 W
200 A
175 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types,
(e.g. 1.5KE440CA).
use
C
or
CA
suffix
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
Peak pulse current with a 10/1000 µs waveform
(1)
Power dissipation on infinite heatsink at T
L
= 75 °C (Fig. 5)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Maximum instantaneous forward voltage at 100 A for uni-directional only
(3)
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3) V
F
= 3.5 V for 1.5KE220 (A) and below; V
F
= 5.0 V for 1.5KE250(A) and above
(2)
(1)
SYMBOL
(Fig. 1)
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
LIMIT
1500
See next table
6.5
200
3.5/5.0
- 55 to + 175
UNIT
W
A
W
A
V
°C
www.vishay.com
106
Document Number: 88301
Revision: 20-Sep-07
Has anyone used the single-input and single-output Schmidt?
Commonly used Schmitt trigger integrated circuits, whether it is NAND gate or NOT gate, have several groups, which are expensive and large. Is there a single group?...
dc0556 Analog electronics
STM32 serial communication
On the basis of the success of the basic experiment, the serial port debugging method is practiced. After the hardware code is successfully completed, the printf redefinition required for future debug...
ptwhero stm32/stm8
After using AD16, the AD10 file icon changed???
After using AD16, the file icon of AD10 becomes like this , what is the reason? Please help me, experts...
DJ4761912 PCB Design
MDK4 and MDK5 compatibility issues solved
I can't complain about the official SDK of GD32. Why is it still the default MDK4 project? And when I open it directly with MDK5, there is no prompt to convert it to MDK4. I want to replace MCU in the...
qwerghf GD32 MCU
How can I make it without TL082 in multisim?
How can I make it using multisim without TL082?...
猫咪爱吃鱼 Analog electronics
Design of key parameters of high-resolution spaceborne SAR system
Abstract: The design of key parameters of high-resolution spaceborne SAR system is discussed, and the limitation of the ratio of swath width to azimuth resolution on system design is analyzed in detai...
JasonYoo Embedded System

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1302  290  2873  2799  738  27  6  58  57  15 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号