NTE917
Integrated Circuit
Dual, Independent Transistor Array, Differential Amp
Description:
The NTE917 is an integrated circuit consisting of two independent differential amplifiers with associated
constant−current transistors on a common monolithic substrate. The six NPN transistors which comprise
the amplifiers are general purpose devices which exhibit low 1/f noise an a value of f
T
in excess of
300MHz. These features make the NTE917 useful from DC to 120MHz. Bias and load resistors have
been omitted to provide maximum application flexibility.
The monolithic construction of the NTE917 provides close electrical and thermal matching of the
amplifiers. This feature makes this device particularly useful in dual−channel applications where
matched performance of the two channels is required.
The NTE917 is supplied in a 14−Lead DIP type plastic package with a limited temperature range. The
availability of extra pins allows the introduction of an independent substrate connection for maximum
flexibility.
Features:
D
Two Different Amplifiers on a Common Substrate
D
Independently Accessible Inputs and Outputs
D
Maximum Input Offset Voltage:
±5mV
D
Limited Temperature Range:
−0°
to +85°C
Applications:
D
Dual Sense Amplifiers
D
Dual Schmitt Triggers
D
Multifunction Combinations
−
RF/Mixer/Oscillator; Converter/IF
D
IF Amplifiers (Differential and/or Cascode)
D
Product Detectors
D
Doubly Balanced Modulators and Demodulators
D
Balanced Quadrature Detectors
D
Cascade Limiters
D
Synchronous Detectors
D
Pairs of Balanced Mixers
D
Synthesizer Mixers
D
Balanced (Push−Pull) Cascode Amplifiers
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Power Dissipation, P
D
Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Total Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Derat Above +55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.67mW/°C
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−40°
to +85°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−65°
to +150°C
Lead Temperature (During Soldering, 1/16”
±1/32”
from case, 10sec max), T
L
. . . . . . . . . . . +265°C
The following ratings apply for each transistor in the device:
Collector−Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector−Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector−Substrate Voltage (Note 1), V
CIO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter−Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Note 1. The collector of each transistor is isolated from the substrate by an integral diode.
The substrate
must be connected to a voltage which is more negative than any collector voltage in order to
maintain isolation between transistors and provide for normal transistor action. The substrate
should be maintained at signal (AC) GND by means of a suitable grounding capacitor, to avoid
undesired coupling between transistors.
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Static Characteristics
For Each Differential Amplifier
Input Offset Voltage
Input Offset Current
Input Bias Current
Quiescent Operating Current Ratio
Temperature Coefficient Magnitude
of Input Offset Voltage
For Each Transistor
DC Forward Base−Emitter Voltage
I
C(Q1)
I
C(Q2)
V
IO
I
IO
I
I
or
Symbol
Test Conditions
Min
Typ
Max
Unit
V
CB
= 3V,
I
E(Q3)
= I
E(Q4)
= 2mA
−
−
−
0.45
0.3
10
5.0
2.0
24
mV
µA
µA
I
C(Q5)
I
C(Q6)
0.98 to 1.02 (Typ)
−
1.1
−
µV/°C
∆V
IO
∆T
V
BE
V
CB
= 3V I
C
= 50µA
I
C
= 1mA
I
C
= 3mA
I
C
= 10mA
−
−
−
−
−
−
15
20
20
5
0.630
0.715
0.750
0.800
−1.9
0.002
24
60
60
7
0.70
0.80
0.85
0.90
−
100
−
−
−
−
V
V
V
V
µV/°C
nA
V
V
V
V
Temperature Coefficient of
Base−Emitter Voltage
Collector Cutoff Current
Collector−Emitter Breakdown Voltage
Collector−Base Breakdown Voltage
Collector−Substrate Breakdown Voltage
Emitter−Base Breakdown Voltage
∆V
BE
∆T
I
CBO
V
(BR)CEO
V
(BR)CBO
V
(BR)CIO
V
(BR)EBO
V
CB
= 3V, I
C
= 1mA
V
CB
= 10V, I
E
= 0
I
C
= 1mA, I
B
= 0
I
C
= 10µA, I
E
= 0
I
C
= 10µA, I
CI
= 0
I
E
= 10µA, I
C
= 0
Electrical Characteristics (Cont’d):
(T
A
= +25°C unless otherwise specified)
Parameter
Dynamic Characteristics
Common−Mode Rejection Ratio
for Each Amplifier
AGC Range, One Stage
Voltage Gain, Single Stage
Double−Ended Output
AGC Range, Two Stage
Voltage Gain, Two Stage
Double−Ended Output
Low−Frequency, Small−Signal
Equivalent−Circuit Characteristics
(For Single Transistor)
Forward Current−Transfer Ratio
Short−Circuit Input Impedance
Open−Circuit Output Impedance
Open−Circuit Reverse Voltage
Transfer Ratio
1/f Noise Figure (For Single Transistor)
Gain−Bandwidth Product
(For Single Transistor)
Admittance Characteristics;
Differential Circuit Configuration:
(For Each Amplifier)
Forward Transfer Admittance
Input Admittance
Output Admittance
Reverse Transfer Admittance
Admittance Characteristics;
Cascode Circuit Configuration:
(For Each Amplifier)
Forward Transfer Admittance
Input Admittance
Output Admittance
Reverse Transfer Admittance
Noise Figure
y
21
y
11
y
22
y
12
NF
f = 100MHz
−
V
CB
= 3V Total Stage
I
C
≈
2.5mA, f = 1MHz
2 5mA
68−j0 (Typ)
0.55+j0 (Typ)
0+j0.02 (Typ)
0.004−j0.005 (Typ)
8
−
mmho
mmho
mmho
µmho
dB
y
21
y
11
y
22
y
12
V
CB
= 3V Each Collector
I
C
≈
1.25mA, f = 1MHz
1 25mA
−20+j0
(Typ)
0.22+j0.1 (Typ)
0.01+j0 (Typ)
−0.003+j0
(Typ)
mmho
mmho
mmho
mmho
h
fe
h
ie
h
oe
h
re
NF
f
T
f = 1kHz, V
CE
= 3V
V
CE
= 3V, I
C
= 3mA
f = 1kHz, V
CE
= 3V,
I
C
= 1mA
−
−
−
110
3.5
15.6
−
−
−
kΩ
µmho
CMRR
AGC
A
AGC
A
V
CC
= 12V, V
EE
=
−6V,
V
x
=
−3.3V,
f = 1kHz
−
−
−
−
−
100
75
32
105
60
−
−
−
−
−
dB
dB
dB
dB
dB
Symbol
Test Conditions
Min
Typ
Max
Unit
1.8 x 10
−4
(Typ)
−
−
3.25
550
−
−
dB
MHz
Pin Connection Diagram
Collector Q
2
1
Base Q
2
2
Base Q
3
3
Emitter Q
3
4
Substrate
5
Base Q
5
6
Collector Q
5
7
14
Collector Q
1
13
Base Q
1
12
Emitter Q
4
11
Base Q
4
10
N.C.
9
Base Q
6
8
Collector Q
6
14
8
1
7
.785 (19.95) Max
.200
(5.08)
Max
.300 (7.62)
.100 (2.45)
.600 (15.24)
.099 (2.5) Min
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