1N4935G datasheet, PDF - EEWORLD Datasheet

1N4935G: Description1 A, 200 V, SILICON, SIGNAL DIODE, DO-41; CategoryDiscrete semiconductor diode; File Size127KB，2 Pages; ManufacturerJGD（Jinan Gude Electronic Device）; Websitehttp://www.jgd.com.cn/

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1 A, 200 V, SILICON, SIGNAL DIODE, DO-41

Parameter Name	Attribute value
Maker	JGD（Jinan Gude Electronic Device）
Reach Compliance Code	unknow
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
Maximum non-repetitive peak forward current	30 A
Number of components	1
Maximum operating temperature	150 °C
Maximum output current	1 A
Maximum repetitive peak reverse voltage	200 V
Maximum reverse recovery time	0.15 µs
surface mount	NO

	1N4935G	1N4934G	1N4933G	1N4936G	1N4937G
Description	1 A, 200 V, SILICON, SIGNAL DIODE, DO-41	1 A, 100 V, SILICON, SIGNAL DIODE, DO-41	SIGNAL DIODE	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	SIGNAL DIODE
Maker	JGD（Jinan Gude Electronic Device）	JGD（Jinan Gude Electronic Device）	JGD（Jinan Gude Electronic Device）	JGD（Jinan Gude Electronic Device）	JGD（Jinan Gude Electronic Device）
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V
Maximum non-repetitive peak forward current	30 A	30 A	30 A	30 A	30 A
Number of components	1	1	1	1	1
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	1 A	1 A	1 A	1 A	1 A
Maximum repetitive peak reverse voltage	200 V	100 V	50 V	400 V	600 V
Maximum reverse recovery time	0.15 µs	0.15 µs	0.15 µs	0.15 µs	0.15 µs
surface mount	NO	NO	NO	NO	NO

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