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2SD1658_07

Description
Silicon NPN Epitaxial Type (Darlington Power Transistor)
File Size185KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SD1658_07 Overview

Silicon NPN Epitaxial Type (Darlington Power Transistor)

2SD1658
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD1658
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Unit: mm
High DC current gain: h
FE
= 2000 (min) (V
CE
= 2 V, I
C
= 1 A)
Low saturation voltage: V
CE (sat)
= 1.5 V (max) (I
C
= 1 A, I
B
= 1 mA)
Zener diode included between collector and base
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
60 ± 10
60 ± 10
8
2
0.5
1.5
10
150
−55
to 150
Unit
V
V
V
A
A
JEDEC
W
°C
°C
2-8H1A
JEITA
TOSHIBA
Weight: 0.82 g (typ.)
Equivalent Circuit
COLLECTOR
BASE
4 kΩ
800
EMITTER
1
2004-07-26
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