RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
TVS
5KP
SERIES
GPP TRANSIENT VOLTAGE SUPPRESSOR
5000 WATT PEAK POWER 8.0 WATTS STEADY STATE
FEATURES
*
*
*
*
*
*
Plastic package has underwriters laboratory
Glass passivated chip construction
5000 watt surage capability at 1ms
Excellent clamping capability
Low zener impedance
Fast response time
R-6
1.0 (25.4)
MIN.
.052 (1.3)
DIA.
.048 (1.2)
.360 (9.1)
.340 (8.6)
Ratings at 25
o
C ambient temperature unless otherwise specified.
.360 (9.1)
.340 (8.6)
1.0 (25.4)
MIN.
DIA.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load,
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types 5KP5.0 thru 5KP110
Electrical characteristics apply in both direction
MAXIMUM RATINGS
(At T
A
= 25 C unless otherwise noted)
RATINGS
Peak Pulse Power Dissipation with a 10/1000uS
waveform (Note 1, FIG.1)
Peak Pulse Current with a 10/1000uS waveform (Note 1, Fig. 3)
Steady State Power Dissipation at T
L
= 75 C lead lengths
0.375” (9.5mm) (Note 2)
Peak Forward Surge Current, 8.3ms single half sine wave-
superimposed on rated load( JEDEC METHOD ) (Note 3)
Instantaneous Forward Voltage at 100A, (Note 3)
Operating and Storage Temperature Range
o
o
o
SYMBOL
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
T
J
, T
STG
VALUE
Minimum 5000
SEE TABLE 1
8.0
400
3.5
-55 to + 150
UNITS
Watts
Amps
Watts
Amps
Volts
0
C
2002-12
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25 C per Fig.2.
2. Mounted on copper pad area of 0.8 X 0.8” ( 20 X 20mm ) per Fig. 5
3. Measured on 8.3mS single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
RATING AND CHARACTERISTIC CURVES ( 5KP5.0 THRU 5KP110CA )
FIG. 1 - PEAK PULSE POWER RATING CURVE
P
PPM
, PEAK PULSE POWER, kW
100
Non-Repetitive
Pulse Waveform
Shown in Fig.3
TA = 25
PEAK PULSE POWER (PPP) OR CURRENT
FIG. 2 - PULSE DERATING CURVE
(IPP) DERATING IN PERCENTAGE,%
100
75
10
50
1.0
25
0.1
0.1uS
0
0
25
50
75
100
125 150
175
)
200
T
A
, AMBIENT TEMPERATURE,(
1.0uS
10uS
100uS
1.0mS
10mS
T
P
, PULSE WIDTH, sec
FIG. 3 - PULSE WAVEFORM
150
I
PPM
, PEAK PULSE CURRENT,%
tr = 10usec.
Peak Value
IPPM
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
100000
f = 1.0 MHz
Vsig = 50mVp-p
TJ = 25
Pulse Width (td) is Defined
as the Point Where the Peak
Current Decays to 50% of I
PPM
C
J
, CAPACITANCE, pF
Measured at
Zero Bias
100
I
PPM
2
10/1000usec. Waveform
as Defined by R.E.A.
HALF VALUE -
10000
50
1000
Measured at
Stand off
Voltage,V
WM
td
0
0
1.0
2.0
t, TIME,mS
3.0
4.0
100
1.0
10
100 200
V(
BR
), BREAKDOWN VOLTACE, VOLTS
FIG. 5 - STEADY STATE POWER DERATING CURVE
P
M
(AV), STEADY STATE POWER
DISSIATION, WATTS
FIG. 6 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT UNIDIRECTIONAL
8
L
= 0.375"(9.5mm)
Lead Lengths
60Hz
Resistive or Inductive Load
I
FSM
, PEAK FORWARD SURGE
CURRENT AMPERES
400
350
300
250
200
150
100
8.3ms Single Half Sine-Wave
(JEDED Method)
6
4
0.8X0.8X0.040"
(20X20mm)
Copper Heat Sinks
2
0
0
25
50
75 100 125 150
TL, LEAD TEMPERATURE (
175
)
200
1
10
NUMBER OF CYCLES AT 60 Hz
100
RECTRON
Microchip MCU
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