DOMINANT
Semiconductors
Innovating Illumination
TM
DATA SHEET:
Power DomiLED
TM
AlInGaP : DWx-EJS
Power DomiLED
TM
With its significant power in terms brightness, viewing angle and variety of
application possibilities,
Power DomiLED™
truly is a standout performer!
Ideal for automotive interior lighting as well as home, office and industrial
applications, it is also a proven performer in electronic signs and signals.
Features:
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High brightness surface mount LED using thin film technology.
120° viewing angle.
Small package outline (LxWxH) of 3.2 x 2.8 x 1.8mm.
Qualified according to JEDEC moisture sensitivity Level 2.
Compatible to IR reflow soldering.
Environmental friendly; RoHS compliance.
Applications:
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Automotive: interior applications, eg: switches, telematics,
climate control system, dashboard, etc.
exterior applications, eg: signal lighting,
Center High Mounted Stop Light (CHMSL),
Display: full color display video notice board.
Industry: white goods (eg: Oven, microwave, etc.).
Lighting: architecture lighting, general lighting, garden light, etc
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© 2005 DomiLED is a trademark of DOMINANT Semiconductors.
All rights reserved. Product specifications are subject to change without notice.
1
25/06/2007 V5.0
DOMINANT
TM
Semiconductors
Innovating Illumination
AlInGaP : DWx-EJS
Part Ordering
Number
DWS-EJS-VW1-1
• DWS-EJS-V1
• DWS-EJS-V2
• DWS-EJS-W1
DWR-EJS-VW1-1
• DWR-EJS-V1
• DWR-EJS-V2
• DWR-EJS-W1
DWA-EJS-V2W-1
• DWA-EJS-V2
• DWA-EJS-W1
• DWA-EJS-W2
DWA-EJS-W2X-1
• DWA-EJS-W2
• DWA-EJS-X1
• DWA-EJS-X2
DWO-EJS-V2W-1
• DWO-EJS-V2
• DWO-EJS-W1
• DWO-EJS-W2
DWO-EJS-W2X-1
• DWO-EJS-W2
• DWO-EJS-X1
• DWO-EJS-X2
DWY-EJS-V2W-1
• DWY-EJS-V2
• DWY-EJS-W1
• DWY-EJS-W2
DWY-EJS-W2X-1
• DWY-EJS-W2
• DWY-EJS-X1
• DWY-EJS-X2
Chip Technology
/ Color
AlIGaP
Super Red, 632nm
Viewing
Angle˚
120
Luminous Flux @
IF = 50mA (mlm)
2145.0 - 4200.0
Luminous Intensity @
IF = 50mA IV (mcd)
715.0 - 1400.0
715.0 - 900.0
900.0 - 1125.0
1125.0 - 1400.0
AlIGaP
Red, 625nm
120
2074.0 - 4060.0
715.0 - 1400.0
715.0 - 900.0
900.0 - 1125.0
1125.0 - 1400.0
AlIGaP
Amber, 615nm
120
2340.0 - 4680.0
900.0 - 1800.0
900.0 - 1125.0
1125.0 - 1400.0
1400.0 - 1800.0
3640.0 - 7410.0
1400.0 - 2850.0
1400.0 - 1800.0
1800.0 - 2240.0
2240.0 - 2850.0
AlIGaP
Orange, 605nm
120
2340.0 - 4680.0
900.0 - 1800.0
900.0 - 1125.0
1125.0 - 1400.0
1400.0 - 1800.0
3640.0 - 7410.0
1400.0 - 2850.0
1400.0 - 1800.0
1800.0 - 2240.0
2240.0 - 2850.0
AlIGaP
Yellow, 587nm
120
2250.0 - 4500.0
900.0 - 1800.0
900.0 - 1125.0
1125.0 - 1400.0
1400.0 - 1800.0
3500.0 - 7125.0
1400.0 - 2850.0
1400.0 - 1800.0
1800.0 - 2240.0
2240.0 - 2850.0
NOTE
1. All part number above comes in a quantity of 2000 units per reel.
2. Luminous intensity is measured with an accuracy of ± 11%.
3. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel.
4. An optional Vf bining is also available upon request. Bining scheme is as per following table.
5. Data provided for luminous flux is based on approximation.
2
25/06/2007 V5.0
DOMINANT
TM
Semiconductors
Innovating Illumination
AlInGaP : DWx-EJS
Wavelength Grouping
Color
Group
Wavelength distribution (nm)
DWS; Super Red
DWR; Red
DWA; Amber
Full
Full
Full
W
X
625 - 640
620 - 630
610 - 621
610 - 615
615 - 621
600 - 612
600 - 603
603 - 606
606 - 609
609 - 612
585 - 594
585 - 588
588 - 591
591 - 594
DWO; Orange
Full
W
X
Y
Z
DWY; Yellow
Full
X
Y
Z
Dominant wavelength is measured with an accuracy of ± 1 nm.
Electrical Characteristics at Ta=25˚C
Part Number
DWx-EJ
Vf @ If = 50mA
Min. (V)
2.0
V
r
@ I
r
= 10uA
Max. (V)
2.8
Typ. (V)
2.2
Min. (V)
12
Forward voltages are measure using a current pulse of 1 ms and with an accuracy of ± 0.1V.
Vf Bining (Optional)
Vf @ If = 50mA
51
52
53
Forward voltage, Vf is measured with an accuracy of ± 0.1V.
Please consult sales and marketing for special part number to incorporate Vf binning.
Forward Voltage (V)
2.0 ... 2.3
2.3 ... 2.6
2.6 ... 2.9
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25/06/2007 V5.0
DOMINANT
TM
Semiconductors
Innovating Illumination
AlInGaP : DWx-EJS
Absolute Maximum Ratings
Maximum Value
DC forward current
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005)
Reverse voltage
ESD threshold (HBM)
LED junction temperature
Operating temperature
Storage temperature
Power dissipation (at room temperature)
Thermal resistance
- Junction / ambient, R
th JA
- Junction / solder point, R
th JS
(Mounting on FR4 PCB, pad size >= 16 mm
2 per pad)
300
130
K/W
K/W
70
100
12
2000
125
-40 … +100
-40 … +100
200
Unit
mA
mA
V
V
˚C
˚C
˚C
mW
Characteristics (Ta = 25˚C)
Symbol
Temperature coefficient of
dom (typ)
I
F
= 50mA; 0 ˚C <= T <= 100 ˚C
TC
dom (typ)
Part Number
DWS-EJS
DWR-EJS
DWA-EJS
DWO-EJS
DWY-EJS
Value
0.05
0.05
0.07
0.07
0.09
-2.2
-4.8
-2.4
-1.2
-1.3
-6.0
-7.4
-11.5
-15.7
-19.0
Unit
nm / K
Temperature coefficient of V
F (typ)
I
F
= 50mA; 0 ˚C <= T <= 100 ˚C
TC
V
DWS-EJS
DWR-EJS
DWA-EJS
DWO-EJS
DWY-EJS
mV / K
Temperature coefficient of I
V (typ)
I
F
= 50mA; 0 ˚C <= T <= 100 ˚C
TC
IV
DWS-EJS
DWR-EJS
DWA-EJS
DWO-EJS
DWY-EJS
mcd / K
4
25/06/2007 V5.0
DOMINANT
TM
Semiconductors
Innovating Illumination
AlInGaP : DWx-EJS
Relative Luminous Intensity Vs Forward Current
Relative Intensity
Relative Intensity; Normalized at 50mA
1.6
1.4
Forward Current Vs Forward Voltage
2.3
1
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
60
70
80
Forward Voltage, V
1.2
2.2
2.1
2
1.9
1.8
0
20
40
60
80
Forward Current, mA
Forward Current, mA
Maximum Current Vs Temperature
Allowable Forward Current, mA
0
10
20
30
40
50
60
70
80
90 100
80
70
Allowable Forward Current Vs Duty Ratio
Allowable Forward Current Vs Duty Ratio
(Ta=25 Deg C, Tp<10us)
1000
Forward Current, mA
60
50
40
30
20
10
0
100
10
1
1
10
100
Ambient Temperature
Duty Ratio, %
Radiation Pattern
30°
20°
10°
0°
1.0
40°
0.8
50°
0.6
60°
70°
80°
90°
0.4
0.2
0
5
25/06/2007 V5.0
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