DOMINANT
Semiconductors
Innovating Illumination
TM
DATA SHEET:
DomiLED
TM
InGaN White High Brightness :
DDx-DJx
DomiLED
TM
TM
Synonymous with function and performance, the
DomiLED
series is
perfectly suited for a variety of cross-industrial applications due to its
small package outline, durability and superior brightness.
Features:
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High brightness surface mount LED.
Based on InGaN / Sapphire technology.
120° viewing angle.
Small package outline (LxWxH) of 3.2 x 2.8 x 1.8mm.
Qualified according to JEDEC moisture sensitivity Level 2.
Compatible to IR reflow soldering.
Environmental friendly; RoHS compliance.
Applications:
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Automotive: interior applications, eg: switches, telematics,
climate control system, dashboard, etc.
Consumer Appliances: LCD illumination as in PDAs, LCD TV.
Communication: indicator and backlight in mobilephone.
Display: full color display video notice board.
Industry: white goods (eg: Oven, microwave, etc.).
© 2005 DomiLED is a tredemark of DOMINANT Semiconductors.
All rights reserved. Product specifications are subject to change without notice.
1
15/05/2007 V(O)
DOMINANT
TM
Semiconductors
Innovating Illumination
InGaN White High Brightness : DDx-DJx
Part Ordering
Number
DDW-DJD-V2W-1
• DDW-DJD-V2
• DDW-DJD-W1
• DDW-DJD-W2
Chip Technology
/ Color
InGaN
White
Viewing
Angle˚
120
Luminous Intensity @
IF = 20mA IV (mcd)
900.0 - 1800.0
900.0 - 1125.0
1125.0 - 1400.0
1400.0 - 1800.0
NOTE
1. All part number above comes in a quantity of 2000 units per reel.
2. Other luminious intensity groups are also available upon request.
3. Luminous intensity is measured with an accuracy of ± 11%.
4. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel.
5. An optional Vf bining is also available upon request. Bining scheme is as per following table.
Electrical Characteristics at Ta=25˚C
Vf @ If = 20mA
Part Number
DDW
Vr @ Ir = 10uA
Max. (V)
3.8
Min. (V)
3.0
Typ. (V)
3.2
Min. (V)
5
Forward voltage, Vf is measured with an accuracy of ± 0.1 V.
Absolute Maximum Ratings
Maximum Value
DC forward current
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005)
Reverse voltage
ESD Threshold (HBM)
LED junction temperature
Operating temperature
Storage temperature
Power dissipation (at room temperature)
20
200
5
1000
100
-40 … +100
-40 … +100
73
Unit
mA
mA
V
V
˚C
˚C
˚C
mW
2
15/05/2007 V(O)
DOMINANT
TM
Innovating Illumination
Semiconductors
InGaN White High Brightness : DDx-DJx
DDW, White Color Grouping
Dominant InGaN White Bin Structure
0.44
0.42
0.40
0.38
0.36
0.34
0.32
0.30
0.28
0.26
0.24
0.27
•
•
•
0.28
A1
A2
•
•
•
0.29
A3
A4
•
•
•
C1
C2
•
•
•
C3
C4
•
•
•
E1
E2
•
•
•
E3
E4
•
•
•
0.30
0.31
0.32
0.33
0.34
0.35
0.36
Chromaticity coordinate groups are measured with an accuracy of ± 0.01.
Bin
A1
A2
A3
A4
C1
C2
C3
C4
Cx
Cy
Cx
Cy
Cx
Cy
Cx
Cy
Cx
Cy
Cx
Cy
Cx
Cy
Cx
Cy
0.2775
0.2732
0.2775
0.2557
0.2900
0.2939
0.2900
0.2764
0.3025
0.3146
0.3025
0.2971
0.3150
0.3354
0.3150
0.3179
W
0.2900
0.2939
0.2900
0.2764
0.3025
0.3146
0.3025
0.2971
0.3150
0.3354
0.3150
0.3179
0.3275
0.3561
0.3275
0.3386
0.2900
0.3114
0.2900
0.2939
0.3025
0.3321
0.3025
0.3146
0.3150
0.3529
0.3150
0.3354
0.3275
0.3736
0.3275
0.3561
0.2775
0.2907
0.2775
0.2732
0.2900
0.3114
0.2900
0.2939
0.3025
0.3321
0.3025
0.3146
0.3150
0.3529
0.3150
0.3354
Bin
E1
E2
E3
E4
Cx
Cy
Cx
Cy
Cx
Cy
Cx
Cy
0.3275
0.3561
0.3275
0.3386
0.3400
0.3768
0.3400
0.3593
X
0.3400
0.3768
0.3400
0.3593
0.3525
0.3975
0.3525
0.3800
0.3400
0.3943
0.3400
0.3768
0.3525
0.4150
0.3525
0.3975
0.3275
0.3736
0.3275
0.3561
0.3400
0.3943
0.3400
0.3768
Dominant color coordinate is measured with an accuracy of ± 0.01.
3
15/05/2007 V(O)
DOMINANT
TM
Semiconductors
Innovating Illumination
InGaN White High Brightness : DDx-DJx
Relative Luminous Intensity Vs. Forward Current
Relative Intensity; Normalized at 20mA
Relative Intensity Normalized, 20mA
2.2
2
1.8
Forward Current Vs Forward Voltage
40
35
Forward Current, mA
0
10
20
30
40
50
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
30
25
20
15
10
5
0
1
1.5
2
2.5
3
3.5
4
4.5
5
Forward Current, mA
Forward Voltage, V
Maximum Forward Current Vs. Temperature
25
Relative Intensity Vs. Wavelength
1
0.9
Forward Current, mA
20
0.8
Relative Intensity
0
10
20
30
40
50
60
70
80
90
0.7
0.6
0.5
0.4
0.3
0.2
0.1
15
10
5
0
0
400
450
500
550
600
650
700
750
800
Ambient Temperature
Wavelength, nm
Radiation Pattern
4
15/05/2007 V(O)
DOMINANT
TM
Innovating Illumination
TM
Semiconductors
InGaN White High Brightness : DDx-DJx
DomiLED
• InGaN White High Brightness : DDx-DJx Package Outlines
5
15/05/2007 V(O)
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