DOMINANT
Semiconductors
Multi DomiLED DMRTB-UJB-ST3+UV3+RS3-1
•
•
•
•
•
•
High brightness tri-color surface mount LED.
Capable for all video-standards. The RGB-LED chips can be controlled
separately.
120° viewing angle.
Small package outline (LxWxH) of 2.8 x 3.2 x 1.9 mm.
Qualified according to JEDEC moisture sensitivity Level 2.
Compatible to both IR reflow soldering and TTW soldering.
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Multi DomiLED Multi DMRTB-UJB-ST3+UV3+RS3-1-catalogue-v1
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DOMINANT
Semiconductors
Part Ordering Number
Color,
λ
dom
(nm)
Luminous Intensity @ If = 20mA . Iv ( mcd )
Chip#1 Chip#2 Chip#3
Red
True
Green
DMRTB-UJB-ST3+UV3+RS3-1
625
•
•
•
•
•
•
•
•
DMRTB-UJB-S3U3R3
DMRTB-UJB-S3U3S3
DMRTB-UJB-S3V3R3
DMRTB-UJB-S3V3S3
DMRTB-UJB-T3U3R3
DMRTB-UJB-T3U3S3
DMRTB-UJB-T3V3R3
DMRTB-UJB-T3V3S3
525
470
Blue
Chip#1
Chip#2
Chip#3
140.0 … 285.0
140.0 … 200.0
140.0 … 200.0
140.0 … 200.0
140.0 … 200.0
200.0 … 285.0
200.0 … 285.0
200.0 … 285.0
200.0 … 285.0
285.0 … 560.0
285.0 … 400.0
285.0 … 400.0
400.0 … 560.0
400.0 … 560.0
285.0 … 400.0
285.0 … 400.0
400.0 … 560.0
400.0 … 560.0
100.0 … 200.0
100.0 … 140.0
140.0 … 200.0
100.0 … 140.0
140.0 … 200.0
100.0 … 140.0
140.0 … 200.0
100.0 … 140.0
140.0 … 200.0
1. Reel comes in a quantity of 1025 and 2050 units per reel.
2. Luminous intensity is measured with an accuracy of
±11%.
3. All electrical and optical data are measured at room temperature; T
a
= 25°C.
Half Group For Luminous Intensity
Only one IV group is allowed for each chip within a reel.
Groupings
R3
S3
T3
U3
V3
Min. (mcd)
100.0
140.0
200.0
285.0
400.0
Max. (mcd)
140.0
200.0
285.0
400.0
560.0
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Multi DomiLED Multi DMRTB-UJB-ST3+UV3+RS3-1-catalogue-v1
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DOMINANT
Semiconductors
Wavelength Grouping.
If wavelength binning is required, only one wavelength group is allowed for each chip within a reel.
Color
Red
True Green
Group
Full
Full
A
B
C
Blue
Full
A
B
Dominant wavelength is measured with an accuracy of
±1
nm.
Wavelength distribution (nm)
618 - 628
521 - 536
521 - 526
526 - 531
531 - 536
465 - 475
465 - 470
470 - 475
Electrical Characteristics at T
a
= 25
o
C
V
f
at I
f
=20mA; (V)
Typ.
Red
True Green
Blue
1.8
3.7
3.6
Max
2.45
4.25
4.25
Temperature coefficient of V
f
(I
f
=20mA; -10
o
C<T<100
o
C)
Typ. ( mV/K )
-2.0
-3.6
-3.1
Optical Characteristics at T
A
= 25
o
C
Temperature coefficient (I
f
=20mA; -10
o
C<T<100
o
C, typ.)
View Angle
(deg.)
120
λ
peak
(nm/K)
Red
True Green
Blue
0.15
0.04
0.04
λ
dom.
(nm/K)
0.05
0.03
0.02
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DOMINANT
Semiconductors
Absolute Maximum Ratings
Maximum Value
DC forward current.
Peak pulse current.
(tp
≤
10
µs,
Duty cycle = 0.005)
Reverse voltage.
Power consumption.
Thermal resistance junction/ambient, R
th JA
1chip on
3 chips on
Thermal resistance junction/solder point, R
th JS
1chip on
3 chips on
LED junction temperature.
Operating temperature.
Storage temperature.
Red
Green, Blue
Unit
mA
mA
30
Red
20
Green, Blue
1000
Red
200
Green, Blue
12
Red
5
Green, Blue
V
V
K/W
75
Red
85
Green, Blue
480
770
Red
530
820
Green, Blue
K/W
260
420
125
290
470
°C
°C
°C
-40 … +100
-40 … +100
Recommended Solder Pad
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Multi DomiLED Multi DMRTB-UJB-ST3+UV3+RS3-1-catalogue-v1
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DOMINANT
Semiconductors
L
uminous intensity vs. forward current.
Intensity vs. DC Forward Current
2.2
Wavelength vs. forward current.
Wavelength vs. Forward Current
470
469.5
535
533
531
529
Blue
527
525
523
521
Green
519
517
515
10
20
30
40
50
R
elat
i
ve in
t
ensity. Normalized at 20
mA.
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
60
Forward Current(mA)
AlInGaP
InGaN
469
468.5
468
467.5
467
466.5
466
Wavelength Distribution.
Relative Spectral Emission
1.0
0.9
0.8
Forward current vs. forward voltage.
Forward Current vs. Forward Voltage
35
30
Forward Current (mA)
Relative Intensity
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
400
450
500
Blue
True
Green
Red
Red
25
20
15
10
5
Blue &
Green
InGaN
550
600
650
700
750
800
0
1
1.5
2
2.5
3
3.5
4
4.5
Forward Voltage (V)
Wavelength (nm)
Radiation pattern.
30°
20°
10°
0°
1.0
40°
0.8
50°
0.6
60°
70°
80°
90°
0.4
0.2
0
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