Key Parameters
V
RRM
=
3200
I
FAVM
=
910
I
FSM
=
9.2
V
F0
=
0.93
r
F
=
0.52
V
A
kA
V
mΩ
Ω
Avalanche Rectifier Diode
5SDA 08D3205
Doc. No. 5SYA 1124 - 01 Apr-98
Features
•
•
•
•
•
Optimized for line frequency rectifiers
Low on-state voltage, narrow V
F
-bands for parallel operation
Self protected against transient overvoltages
Guaranteed maximum avalanche power dissipation
Industry standard housing
Blocking
Part number
V
RRM
V
RSM
I
RRM
P
RSM
5SDA 08D3205
3200
3520
≤
≤
≤
50
70
50
mA
kW
kW
5SDA 08D2905
2900
3190
Condition
f
t
P
t
P
t
P
= 50 Hz
= 10 ms
= 20 µs
= 20 µs
t
P
T
j
T
j
T
j
T
j
= 10 ms
= 160°C
= 160°C
=
45°C
= 160°C
V
RRM
Mechanical data
F
M
a
Mounting force
min.
max.
Acceleration
Device unclamped
Device clamped
Weight
Surface creepage distance
Air strike distance
10 kN
12 kN
50 m/s
200 m/s
2
0.25 kg
30 mm
20.5 mm
2
m
D
S
D
a
ABB Semiconductors AG
ABB Semiconductors AG
5SDA 08D3205
On-state
I
FAVM
I
FRMS
I
FSM
I
2
t
V
F0
r
F
V
F min
V
F max
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
Threshold voltage
Slope resistance
On-state voltage
On-state voltage
910 A
1430 A
9.2 kA
10.0 kA
2
420⋅10
3
A s
2
415⋅10
3
A s
Half sine wave, T
C
= 85°C
tp
tp
tp
tp
I
F
I
F
=
=
=
=
=
=
10 ms
8.3 ms
10 ms
8.3 ms
800 - 2400 A
1800 A
T
j
=
T
j
=
160°C
25°C
T
j
=
160°C
After surge:
V
R
≈
0V
0.93 V
0.52 mΩ
1.50 V
1.70 V
Thermal
T
j
R
thJC
Storage and operating
junction temperature range
Thermal resistance
junction to case
R
thCH
Thermal resistance case to
heat sink
80 K/kW
80 K/kW
40 K/kW
16 K/kW
8 K/kW
Anode side cooled
Cathode side cooled
Double side cooled
Single side cooled
Double side cooled
45
-40...160°C
Analytical function for transient thermal impedance:
40
Z
th
35
30
25
20
15
F
m
=10...12 kN
Double Side Cooling
Z
thJC
(t) =
i
R
(K/kW)
τ
i
(s)
1
20.95
0.396
∑
R (1- e
i
i
=
1
2
10.57
0.072
3
7.15
4
-t/
τ
i
)
4
1.33
[K/kW]
10
5
0
10
-3
2
3 4 5 67
0.009
0.0044
10
-2
2
3 4 5 67
10
-1
t [s]
2
3 4 5 56
10
0
2
3 4 5 67
10
1
For a given case temperature T
c
at ambient temperature T
a
the maximum on-state current can be calculated as follows:
I
FAVM
=
-V
F0
+
(V
F0
)
2
+
4 * f * r
f
* P
2 * f
2
*
r
f
or
2
I
FAVM
(A)
T
max
(°C)
R
thja
(K/kW)
f =
2
P (W)
T
c
(°C)
R
thJC
(K/kW)
for DC current
for half-sine wave
for 120°el., sine
for 60° el., sine
V
F0
(V)
T
a
(°C)
r
F
(Ω)
where
T
J max
- T
C
P=
R
thjc
T
J max
- T
A
P=
R
thja
1
2.5
3.1
6
Doc. No. 5SYA 1124 - 01 Apr-98
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax
+41 (0)62 888 6306
Embedded System
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