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5SDA10D2303

Description
Avalanche Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size24KB,2 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric Compare View All

5SDA10D2303 Overview

Avalanche Rectifier Diode

5SDA10D2303 Parametric

Parameter NameAttribute value
package instructionD, 2 PIN
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.35 V
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current14400 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature160 °C
Minimum operating temperature-40 °C
Maximum output current1140 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage2300 V
surface mountYES
technologyAVALANCHE
Terminal formNO LEAD
Terminal locationEND
Base Number Matches1
Key Parameters
V
RRM
=
2300
I
FAVM
=
1140
I
FSM
=
13.5
V
F0
=
0.83
r
F
=
0.30
V
A
kA
V
mΩ
Avalanche Rectifier Diode
5SDA 10D2303
Doc. No. 5SYA 1120 - 01 Apr-98
Features
Optimized for line frequency rectifiers
Low on-state voltage, narrow V
F
-bands for parallel operation
Self protected against transient overvoltages
Guaranteed maximum avalanche power dissipation
Industry standard housing
Blocking
Part number
V
RRM
V
RSM
I
RRM
P
RSM
5SDA 10D2303
2300
2530
5SDA 10D2003
2000
2200
50
70
50
mA
kW
kW
5SDA 10D1703 Condition
1700
1870
f
t
P
t
P
t
P
= 50 Hz
= 10 ms
= 20 µs
= 20 µs
t
P
T
j
T
j
T
j
T
j
= 10 ms
= 160°C
= 160°C
=
45°C
= 160°C
V
RRM
Mechanical data
F
M
a
Mounting force
min.
max.
Acceleration
Device unclamped
Device clamped
Weight
Surface creepage distance
Air strike distance
10 kN
12 kN
50 m/s
200 m/s
2
0.25 kg
30 mm
20.5 mm
2
m
D
S
D
a
ABB Semiconductors AG

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Description Avalanche Rectifier Diode Avalanche Rectifier Diode Avalanche Rectifier Diode Avalanche Rectifier Diode Avalanche Rectifier Diode Avalanche Rectifier Diode
package instruction D, 2 PIN D, 2 PIN D, 2 PIN O-CEDB-N2 D, 2 PIN D, 2 PIN
Contacts 2 2 2 2 2 2
Reach Compliance Code compli compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.35 V 1.35 V 1.35 V 1.25 V 1.25 V 1.25 V
JESD-30 code O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
Maximum non-repetitive peak forward current 14400 A 14500 A 14500 A 16000 A 16000 A 16000 A
Number of components 1 1 1 1 1 1
Phase 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 160 °C 160 °C 160 °C 160 °C 160 °C 160 °C
Maximum output current 1140 A 1140 A 1140 A 1310 A 1310 A 1310 A
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 2300 V 2000 V 1700 V 1400 V 1100 V 1700 V
surface mount YES YES YES YES YES YES
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location END END END END END END
Base Number Matches 1 1 1 1 1 1
Other features HIGH RELIABILITY TRANSIENT VOLTAGE PROTECTED - TRANSIENT VOLTAGE PROTECTED TRANSIENT VOLTAGE PROTECTED HIGH RELIABILITY
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