Key Parameters
V
RRM
=
5000
I
FAVM
=
1410
I
FSM
=
17.5
V
F0
=
1.13
r
F
=
0.44
V
A
kA
V
mΩ
Ω
Avalanche Rectifier Diode
5SDA 14F5007
Doc. No. 5SYA 1126 - 01 Apr-98
Features
•
•
•
•
•
Optimized for line frequency rectifiers
Low on-state voltage, narrow V
F
-bands for parallel operation
Self protected against transient overvoltages
Guaranteed maximum avalanche power dissipation
Industry standard housing
Blocking
Part number
V
RRM
V
RSM
I
RRM
P
RSM
5SDA 14F5007
5000
5500
≤
≤
≤
5SDA 14F4407
4400
5280
50
70
50
mA
kW
kW
5SDA 14F3807
3800
4180
Condition
f
t
P
t
P
t
P
= 50 Hz
= 10 ms
= 20 µs
= 20 µs
t
P
T
j
T
j
T
j
T
j
= 10 ms
= 160°C
= 160°C
=
45°C
= 160°C
V
RRM
Mechanical data
F
M
a
Mounting force
min.
max.
Acceleration
Device unclamped
Device clamped
Weight
Surface creepage distance
Air strike distance
20 kN
24 kN
50 m/s
2
200 m/s
2
0.5 kg
30 mm
20 mm
m
D
S
D
a
ABB Semiconductors AG
ABB Semiconductors AG
5SDA 14F5007
On-state
I
FAVM
I
FRMS
I
FSM
I
2
t
V
F0
r
F
V
F min
V
F max
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
Threshold voltage
Slope resistance
On-state voltage
On-state voltage
1410 A
2210 A
17.5 kA
19.0 kA
2
1530⋅10
3
A s
2
1500⋅10
3
A s
Half sine wave, T
C
= 85°C
tp
tp
tp
tp
I
F
I
F
=
=
=
=
10 ms
8.3 ms
10 ms
8.3 ms
T
j
=
T
j
=
160°C
25°C
T
j
=
160°C
After surge:
V
R
≈
0V
1.13 V
0.44 mΩ
2.00 V
2.40 V
= 1000 - 3000 A
=
4000 A
Thermal
T
j
R
thJC
Storage and operating
junction temperature range
Thermal resistance
junction to case
R
thCH
Thermal resistance case to
heat sink
40 K/kW Anode side cooled
40 K/kW Cathode side cooled
20 K/kW Double side cooled
10 K/kW Single side cooled
5 K/kW Double side cooled
-40...160°C
Analytical function for transient thermal impedance:
24
Z
th
F
m
= 20...24 kN
20
16
12
8
Double Side Cooling
Z
thJC
(t) =
i
R
(K/kW)
τ
I
(s)
1
11.83
0.432
∑
R (1- e
i
i
=
1
2
4.26
0.071
3
1.63
0.01
4
-t/
τ
i
[K/kW]
)
4
2.28
4
0
10
-3
0.0054
2
3 4 5 67
10
-2
2
3 4 5 67
10
-1
t [s]
2
3 4 5 56
10
0
2
3 4 5 67
10
1
For a given case temperature T
c
at ambient temperature T
a
the maximum on-state current can be calculated as follows:
I
FAVM
=
-V
F0
+
(V
F0
)
2
+
4 * f * r
f
* P
2 * f
2
*
r
f
or
2
I
FAVM
(A)
T
max
(°C)
R
thja
(K/kW)
f =
2
P (W)
T
c
(°C)
R
thJC
(K/kW)
for DC current
for half-sine wave
for 120°el., sine
for 60° el., sine
V
F0
(V)
T
a
(°C)
r
F
(Ω)
where
T
J max
- T
C
P=
R
thjc
T
J max
- T
A
P=
R
thja
1
2.5
3.1
6
Doc. No. 5SYA 1126 - 01 Apr-98
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax
+41 (0)62 888 6306
MCU
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