V
RRM
I
FAVM
I
FRMS
I
FSM
V
F0
r
F
=
=
=
=
=
=
200 V
11000 A
17300 A
85000 A
0.75 V
0.020 mΩ
Rectifier Diode
5SDD 0120C0200
Doc. No. 5SYA1157-01 July 06
•
Optimized for high current rectifiers
•
Very low on-state voltage
•
Very low thermal resistance
Blocking
V
RRM
V
RSM
I
RRM
Repetitive peak reverse voltage
Maximum peak reverse voltage
Repetitive peak reverse current
200 V
300 V
≤
50 mA
Half sine wave, t
P
= 10 ms, f = 50 Hz
Half sine wave, t
P
= 10 ms
T
j
= 170 °C
V
R
= V
RRM
Mechanical
F
M
a
Mounting force
min.
max.
Acceleration:
Device unclamped
Device clamped
m
D
S
D
a
Weight
Surface creepage distance
Air strike distance
50 m/s
2
200 m/s
2
0.22 kg
4 mm
4 mm
35 kN
40 kN
Fig. 1
Outline drawing.
All dimensions are in millimeters and represent
nominal values unless stated otherwise.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SDD 0120C0200
On-state
I
FAVM
I
FRMS
I
FSM
∫I
2
dt
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive surge current
11000 A
17300 A
85000 A
92500 A
Max. surge current integral
t
p
=
t
p
=
10 ms Before surge
8.3 ms T
j
= 170 °C
10 ms
After surge:
Half sine wave, T
c
= 85 °C
36100 kA
2
s t
p
=
35700 kA
2
s t
p
=
8.3 ms V
R
≈
0V
8000 A
T
j
= 170 °C
V
F max
V
F0
r
F
Maximum on-state voltage
Threshold voltage
Slope resistance
≤
0.92 V
0.75 V
0.020 mΩ
I
F
=
Approximation for T
j
= 170 °C
I
F
=
8 - 18 kA
Thermal characteristics
T
j
T
stg
R
th(j-c)
Operating junction temperature range
Storage temperature range
Thermal resistance
junction to case
-40...170 °C
-40…170 °C
≤
≤
≤
R
th(c-h)
Thermal resistance
case to heatsink
≤
≤
12 K/kW Anode side cooled
12 K/kW Cathode side cooled
6 K/kW Double side cooled
6 K/kW Single side cooled
3 K/kW Double side cooled
F
M
= 35…40 kN
Z
thJC
[K/kW]
8
Double sided cooling
F
m
= 35...40 kN
Z
th
(
j - c
)
(t) =
i
1
3.37
0.095
R
i
(K/kW)
5SDD 0120C0200
∑
2
4
R
i
(1 - e
- t /
τ
i
)
3
0.63
0.0035
4
0.67
0.001
6
i
=
1
1.50
4
τ
i
(s)
0.048
2
F
M
= 35…40 kN
Double side cooled
0
10
-3
10
-2
10
-1
t [s]
10
0
Fig. 2
Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 2 of 4
Doc. No. 5SYA1157-01 July 06
5SDD 0120C0200
On-state characteristics
I
F
[A]
18000
16000
14000
12000
10000
8000
min.
max.
Surge current characteristics
I
FSM
[kA]
140
5SDD 0120C0200
∫
i
2
dt [MA
2
s]
44
T
j
= 170°C
120
I
FSM
∫i
t
2
40
T
j
= 170°C
100
36
80
6000
5SDD 0120C0200
32
4000
2000
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
60
28
40
10
0
10
1
10
2
24
1.6
V
F
[V]
t [ms]
Fig. 3
Forward current vs. forward voltage (min.
and max. values).
Fig. 4
Surge current and fusing integral vs. pulse
width (max. values) for non-repetitive, half-
sinusoidal surge current pulses.
Current load capability
I
D
( kA )
28
26
24
22
20
18
16
1
10
5SDD 0120C0200
ID vs. ED, 1000 Hz square wave, T
C
= 100 °C
n
n
n
n
=
50
= 100
= 500
= 1000
pulses
pulses
pulses
pulses
Duty cycle ED (%)
100
Fig. 5
DC-output current with single-phase centre tap
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 3 of 4
Doc. No. 5SYA1157-01 July 06
5SDD 0120C0200
Current load capacity, cont.
I
D
( k A )
36
34
32
30
28
26
24
22
20
18
16
1
10
5SDD 0120C0200
ID vs. ED, 1000 Hz square-wave, T
h
= 60 °C
n = 50 pulses
n = 100 pulses
n = 500 pulses
n = 1000 pulses
Duty cycle ED (%)
100
Fig. 6
DC-output current with single-phase centre tap
I
D
-
+
Fig. 7
Definition of ED for typical welding
sequence
Fig. 8
Definition of ID for single-phase centre tap
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1157-01 July 06
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