V
RSM
I
F(AV)M
I
F(RMS)
I
FSM
V
F0
r
F
=
=
=
=
=
=
3000
1285
2019
15×10
3
0.933
0.242
V
A
A
A
V
mΩ
Rectifier Diode
5SDD 11D2800
Doc. No. 5SYA1166-00 Okt. 03
•
Very low on-state losses
•
Optimum power handling capability
Blocking
Maximum rated values
1)
Parameter
Repetetive peak reverse voltage
Symbol Conditions
V
RRM
f = 50 Hz, t
p
= 10ms, T
j
= -40...160°C
f = 5 Hz, t
p
= 10ms, T
j
= -40...160°C
Value
2800
3000
Unit
V
V
Non - repetetive peak reverse voltage V
RSM
Characteristic values
Parameter
Max. (reverse) leakage current
Symbol Conditions
I
RRM
V
RRM
, Tj = 160°C
min
typ
max
30
Unit
mA
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
8
typ
10
max
12
50
100
Unit
kN
m/s
m/s
2
2
Parameter
Weight
Housing thickness
Surface creepage distance
Symbol Conditions
m
H
D
S
F
M
= 10 kN, T
a
= 25 °C
min
25.5
33
typ
0.3
max
26.5
Unit
kg
mm
mm
mm
Air strike distance
D
a
18
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SDD 11D2800
On-state
Maximum rated values
1)
Parameter
Max. average on-state
current
Max. peak non-repetitive
surge current
Limiting load integral
Max. peak non-repetitive
surge current
Limiting load integral
Symbol Conditions
I
F(AV)M
50 Hz, Half sine wave, T
C
= 85 °C
min
typ
max
1285
2019
Unit
A
A
A
A
2
s
A
A
2
s
Max. RMS on-state current I
F(RMS)
I
FSM
I
2
t
I
FSM
I
2
t
t
p
= 8.3 ms, T
j
= 160°C,
V
R
= 0 V
t
p
= 10 ms, T
j
= 160°C,
V
R
= 0 V
15×10
1.125×10
16×10
1.066×10
3
6
3
6
Characteristic values
Parameter
On-state voltage
Threshold voltage
Slope resistance
Symbol Conditions
V
F
V
(T0)
r
T
I
F
= 1500 A, T
j
= 160°C
T
j
= 160°C
I
T
= 1500...4500 A
min
typ
max
1.3
0.933
0.242
Unit
V
V
mΩ
Switching
Characteristic values
Parameter
Symbol Conditions
Q
rr
di
F
/dt = -30 A/
µs, V
R
= 100 V
min
typ
2200
max
3000
Unit
µAs
Recovery charge
I
FRM
= 1000 A, T
j
= 160°C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1166-00 Okt. 03
page 2 of 6
5SDD 11D2800
Thermal
Maximum rated values
1)
Parameter
Operating junction
temperature range
Characteristic values
Symbol Conditions
T
vj
min
-40
-40
min
typ
max
160
175
Unit
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
K/kW
Storage temperature range T
stg
Parameter
Symbol Conditions
Double-side cooled
F
m
= 8...12 kN
Anode-side cooled
F
m
= 8...12 kN
Cathode-side cooled
F
m
= 8...12 kN
Double-side cooled
F
m
= 8...12 kN
Single-side cooled
F
m
= 8...12 kN
typ
max
32
50
88
8
16
Thermal resistance junction R
th(j-c)
to case
R
th(j-c)A
R
th(j-c)C
Thermal resistance case to R
th(c-h)
heatsink
R
th(c-h)
Analytical function for transient thermal
impedance:
Z
th(j-c)
(t) =
∑
R
th i
(1 - e
-t/
τ
i
)
i
=
1
i
R
th i
(K/kW)
τ
i
(s)
1
11.600
0.7033
2
10.110
0.2185
3
7.870
0.0588
4
2.410
0.0042
Fig. 1
Transient thermal impedance junction-to-
case.
n
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1166-00 Okt. 03
page 3 of 6
5SDD 11D2800
I
F
( A )
9000
25 °C 160 °C
8000
7000
6000
5000
4000
3000
2000
1000
0
0
1
2
V
F
(V)
3
I
FSM
( kA )
30
I
FSM
25°C
25
160°C
20
∫
i
2
dt
25°C
3
i
2
dt
(10
6
A
2
s)
2,5
2
15
160 °C
1,5
10
1
5
0,5
0
1
10
t ( ms )
0
100
Fig. 2
Max. on-state characteristics.
P
T
( W )
2500
Fig. 3
Surge forward current vs. pulse length. Half
sine wave, single pulse, V
R
= 0 V
120° 180°
P
T
( W )
2500
60°
ψ
= 30°
2000
DC
2000
60° 90° 120° 180°
270°
DC
1500
1500
1000
1000
500
500
0
0
400
800
1200
1600
0
0
500
1000
1500
I
FAV
( A )
I
FAV
( A )
Fig. 4
Forward power loss vs. average forward
current, sine waveform, f = 50 Hz
Fig. 5
Forward power loss vs. average forward
current, square waveform, f = 50 Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1166-00 Okt. 03
page 4 of 6
5SDD 11D2800
T
C
( °C )
T
C
( °C )
170
160
150
140
130
120
110
100
90
80
70
60
0
400
800
170
160
150
140
130
120
110
100
DC
90
80
70
DC
270°
180°
ψ
= 30°
0
400
800
60°
1200
120°180°
1600
60
60°
90° 120°
1200
1600
I
FAV
( A )
I
FAV
( A )
Fig. 6
Max. case temperature vs aver. forward
current, sine waveform, f = 50 Hz
10000
Q
rr
( µC )
Fig. 7
Max. case temperature vs aver. forward
current, square waveform, f = 50 Hz
1000
I
rrM
( A )
100
1000
max
max
min
min
100
1
10
dI
F
/dt
( A/µs )
100
10
1
10
dI
F
/dt
( A/µs )
100
Fig. 8
Reverse recovery charge vs. dI
F
/dt,
I
F
= 1000 A; T
j
= T
jmax
, limit values
Fig. 9
Peak reverse recovery current vs. di
F
/dt,
I
F
= 1000 A; T
j
= T
jmax
, limit values
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1166-00 Okt. 03
page 5 of 6
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