V
RRM
I
FAVM
I
FRMS
I
FSM
V
F0
r
F
=
=
=
=
=
=
400 V
13526 A
21247 A
85000 A
0.758 V
0.021 mΩ
Housingless Welding Diode
5SDD 0135Z0400
PRELIMINARY
Doc. No. 5SYA1179-00 March 07
•
•
•
•
High forward current capability
Low forward and reverse recovery losses
High current application up to 2000 Hz
For parallel connection, please contact factory
Blocking
V
RRM
I
RRM
Repetitive peak reverse voltage
Repetitive peak reverse current
400 V
75 mA
Half sine waveform, f = 50 Hz
T
j
= -40...180 °C
V
R
= V
RRM
Mechanical
F
M
m
D
S
D
a
Mounting force
Weight
Surface creepage distance
Air strike distance
35..70 kN
0.14 kg
2 mm
2 mm
Fig. 1
Outline drawing.
All dimensions are in millimeters and represent
nominal values unless stated otherwise.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SDD 0135Z0400
On-state
I
FAVM
I
FRMS
I
FSM
∫I
dt
2
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive surge current
13526 A
21247 A
91000 A
85000 A
T
c
=
T
c
=
t
p
=
t
p
=
85 °C
85 °C
Half sine pulse
Half sine pulse
8.3 ms V
R
=0 V
10 ms Half sine pulse
8.3 ms V
R
=0 V
10 ms Half sine pulse
8000 A
10000 A
Max. surge current integral
34200 kA
2
s t
p
=
36100 kA
2
s t
p
=
0.920 V
0.970 V
I
F
=
I
F
=
V
F max
V
F0
r
F
Qrr
Max. on-state voltage
Max. Threshold voltage
Max. Slope resistance
Typ. Recovered charge
0.758 V
0.021 mΩ
600 µC
I
F
= 10 000…30 000 A
I
F
= 1 000 A, di/dt = -30 A/µs,
V
R
= 100 V
Unless otherwise specified T
j
= 180 °C
Thermal characteristics
T
j
T
stg
R
th(j-c)
Operating junction temperature range
Storage temperature range
Thermal resistance
junction to case
-40...180 °C
-40...180 °C
5.2 K/kW Anode side cooled
15.1 K/kW Cathode side cooled
3.9 K/kW Double side cooled
R
th(c-h)
Thermal resistance
case to heatsink
4.7 K/kW Anode side cooled
5.8 K/kW Cathode side cooled
2.6 K/kW Double side cooled
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 2 of 6
Doc. No. 5SYA1179-00 March 07
5SDD 0135Z0400
Z
th
(
j - c
)
(t) =
4
Transient therm al impedance
junction to case
Z
thjc
( K/kW )
3
∑
2
4
R
i
(1 - e
- t /
τ
i
)
3
0.2200
4
0.1500
0.0006
i
=
1
i
R
i
(K/kW)
1
2.6480
0.8700
2
1
0.0454
0.0255
0.0041
τ
i
(s)
Conditions:
F
m
= 35 +5/-0 kN, Double side cooled
Correction for periodic waveforms
180° sine:
0.9 K/kW
120° sine:
1.2 K/kW
60° sine:
2.2 K/kW
180° rectangular:
0.8 K/kW
120° rectangular:
1.2 K/kW
60° rectangular:
2.2 K/kW
0
0,0001
0,001
0,01
0,1
1
Square w ave pulse duration
t
d
( s )
Fig. 2
Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 3 of 6
Doc. No. 5SYA1179-00 March 07
5SDD 0135Z0400
On-state characteristics
I
F
( A )
35000
T
j
= 180 °C
25 °C
Surge current characteristics
i
2
dt
(10
6
A
2
s)
200
I
FSM
( kA )
80
30000
70
25000
150
∫
i
2
dt
60
20000
100
50
15000
40
30
10000
50
I
FSM
20
5000
10
0
0
0,5
1
1,5
V
F
2
(V)
0
1
10
t ( ms )
0
100
Fig. 3
Forward current vs. forward voltage (max.
values).
Fig. 4
Surge forward current vs. pulse length,
half sine wave, single pulse,
V
R
= 0 V, T
j
= T
jmax
Surge current characteristics
I
FSM
( kA )
90
80
70
60
Forward power loss
P
T
( W )
25000
ψ
= 60°
120° 180°
20000
DC
15000
50
V
R
= 0 V
40
30
20
10
V
R
≤
0.5 V
RRM
10000
5000
0
0
1
10
100
Number n of cycles at 50 Hz
0
4000
8000
12000
16000
I
FAV
( A )
Fig. 5
Surge forward current vs. number
of pulses, half sine wave, T
j
= T
jmax
Fig. 6
Forward power loss vs. average forward
current, sine waveform, f = 50 Hz, T = 1/f
Doc. No. 5SYA1179-00 March 07
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 4 of 6
5SDD 0135Z0400
Forward power loss
P
T
( W )
180°
270°
DC
15000
120
10000
100
140
20000
T
C
( °C )
25000
ψ
= 30°
60° 90° 120°
180
160
DC
5000
80
0
0
4000
8000
12000
16000
60
0
4000
ψ
= 60°
8000
120°
12000
180°
16000
I
FAV
( A )
I
FAV
( A )
Fig. 7
Forward power loss vs. average forward
current, square waveform, f = 50 Hz, T =
1/f
Fig. 8
Forward power loss vs. average forward
current, sine waveform, f = 50 Hz, T = 1/f
T
C
( °C )
180
160
140
120
DC
100
270°
80
60
0
ψ
= 30°
4000
60°
8000
90°
120°
12000
180°
16000
I
FAV
( A )
Fig. 9
Max. case temperature vs. aver. forward
current, square waveform, f = 50 Hz, T =
1/f
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 5 of 6
Doc. No. 5SYA1179-00 March 07
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