V
RSM
I
F(AV)M
I
F(RMS)
I
FSM
V
F0
r
F
=
=
=
=
=
=
5500
3480
5470
46×10
3
0.94
0.147
V
A
A
A
V
mΩ
Rectifier Diode
5SDD 33L5500
Doc. No. 5SYA1168-00 March 05
•
Patented free-floating silicon technology
•
Very low on-state losses
•
Optimum power handling capability
Blocking
Maximum rated values
1)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Characteristic values
Symbol Conditions
V
RRM
V
RSM
f = 50 Hz, t
p
= 10ms, T
j
= 0...150°C
f = 5 Hz, t
p
= 10ms, T
j
= 0...150°C
Value
5000
5500
Unit
V
V
Parameter
Max. (reverse) leakage current
Symbol Conditions
I
RRM
V
RRM
, Tj = 150°C
min
typ
max
400
Unit
mA
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
63
typ
70
max
77
50
100
Unit
kN
m/s
m/s
2
2
Parameter
Weight
Housing thickness
Surface creepage distance
Symbol Conditions
m
H
D
S
F
M
= 70 kN, T
a
= 25 °C
min
26.0
35
typ
max
1.45
26.6
Unit
kg
mm
mm
mm
Air strike distance
D
a
14
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SDD 33L5500
On-state
Maximum rated values
1)
Parameter
Max. average on-state
current
Max. peak non-repetitive
surge current
Limiting load integral
Max. peak non-repetitive
surge current
Limiting load integral
Symbol Conditions
I
F(AV)M
50 Hz, Half sine wave, T
C
= 90 °C
min
typ
max
3480
5470
Unit
A
A
A
A
2
s
A
A
2
s
Max. RMS on-state current I
F(RMS)
I
FSM
I
2
t
I
FSM
I
2
t
t
p
= 8.3 ms, T
j
= 150°C,
V
R
= 0 V
t
p
= 10 ms, T
j
= 150°C,
V
R
= 0 V
46×10
3
10.6×10
49.2×10
6
3
10.06×10
6
Characteristic values
Parameter
On-state voltage
Threshold voltage
Slope resistance
Symbol Conditions
V
F
V
(T0)
r
T
I
F
= 5000 A, T
j
= 150°C
T
j
= 150°C
I
T
= 3000...8000 A
min
typ
max
1.68
0.94
0.147
Unit
V
V
mΩ
Switching
Characteristic values
Parameter
Symbol Conditions
Q
rr
di
F
/dt = -10 A/µs, V
R
= 200 V
I
FRM
= 4000 A, T
j
= 150°C
min
typ
max
10000
Unit
µAs
Recovery charge
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1168-00 March 05
page 2 of 6
5SDD 33L5500
Thermal
Maximum rated values
1)
Parameter
Operating junction
temperature range
Characteristic values
Symbol Conditions
T
vj
min
0
-40
min
typ
max
150
150
Unit
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
K/kW
Storage temperature range T
stg
Parameter
Symbol Conditions
Double-side cooled
F
m
= 63...77 kN
Anode-side cooled
F
m
= 63...77 kN
Cathode-side cooled
F
m
= 63...77 kN
Double-side cooled
F
m
= 63...77 kN
Single-side cooled
F
m
= 63...77 kN
typ
max
7
14
14
1.5
3
Thermal resistance junction R
th(j-c)
to case
R
th(j-c)A
R
th(j-c)C
Thermal resistance case to R
th(c-h)
heatsink
R
th(c-h)
Analytical function for transient thermal
impedance:
Z
th(j-c)
(t) =
∑
R
th i
(1 - e
-t/
τ
i
)
i
=
1
i
R
th i
(K/kW)
τ
i
(s)
1
4.701
0.5463
2
1.401
0.0746
3
0.611
0.0087
4
0.298
0.0021
Fig. 1
Transient thermal impedance junction-to-
case.
n
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1168-00 March 05
page 3 of 6
5SDD 33L5500
Max. on-state characteristic model:
V
F25
=
A
25
-352.00×10
-6
Max. on-state characteristic model:
V
F150
=
A
150
-3
A
Tvj
+
B
Tvj
⋅
I
F
+
C
Tvj
⋅
ln(
I
F
+
1)
+
D
Tvj
⋅
I
F
Valid for I
F
= 300 – 70000 A
B
25
C
25
38.50×10
-6
A
Tvj
+
B
Tvj
⋅
I
F
+
C
Tvj
⋅
ln(
I
F
+
1)
+
D
Tvj
⋅
I
F
Valid for I
F
= 300 – 70000 A
B
150
-6
D
25
4.47×10
C
150
-6
D
150
-3
127×10
-3
95.90×10
89.80×10
90.50×10
6.60×10
-3
Fig. 2
Isothermal on-state characteristics
Fig. 3
Isothermal on-state characteristics
Fig. 4
On-state power losses vs average on-state
current.
Fig. 5
Max. permissible case temperature vs
average on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1168-00 March 05
page 4 of 6
5SDD 33L5500
Fig. 6
Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
Fig. 7
Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
Fig. 8
Recovery charge vs. decay rate of on-state
current.
Fig. 9
Peak reverse recovery current vs. decay rate
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1168-00 March 05
page 5 of 6
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