V
RRM
I
FAVM
I
FSM
V
F0
r
F
V
DClink
=
=
=
=
=
=
4500
435
16
2.42
2.1
2800
V
A
kA
V
mΩ
Ω
V
Fast Recovery Diode
5SDF 05F4502
Doc. No. 5SYA1151-01 Sep. 01
•
Patented free-floating technology
•
Industry standard housing
•
Cosmic radiation withstand rating
•
Low on-state and switching losses
•
Optimized to use in snubberless operation
Blocking
V
RRM
I
RRM
V
DClink
V
DClink
Repetitive peak reverse voltage
Repetitive peak reverse current
Permanent DC voltage for 100 FIT
failure rate
Permanent DC voltage for 100 FIT
failure rate
≤
4500 V
20 mA
2800
3200
V
V
Half sine wave, t
P
= 10 ms, f = 50 Hz
V
R
= V
RRM,
T
j
= 115°C
100% Duty
5% Duty
Ambient cosmic radiation at
sea level in open air.
Mechanical data
F
m
a
Mounting force
min.
max.
18 kN
22 kN
2
2
Acceleration:
Device unclamped
Device clamped
50 m/s
200 m/s
0.46 kg
≥
≥
33 mm
20 mm
m
D
S
D
a
Weight
Surface creepage distance
Air strike distance
ABB Semiconductors AG reserves the right to change specifications without notice.
5SDF 05F4502
On-state
(see Fig. 1, 2)
I
FAVM
I
FRMS
I
FSM
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive
surge current
òI
2
dt
Max. surge current integral
435 A
685 A
16 kA
32 kA
2
1.28⋅10
6
A s
2
0.5⋅10
6
A s
Half sine wave, T
c
= 70°C
tp
tp
tp
tp
I
F
=
=
=
=
=
10 ms
1 ms
10 ms
1 ms
1100 A
Before surge:
T
c
= T
j
= 115°C
After surge:
V
R
≈
0 V
V
F
V
F0
r
F
Forward voltage drop
Threshold voltage
Slope resistance
≤
4.7 V
2.42 V
2.1 mΩ
Approximation for
I
F
= 200…2000
A
T
j
= 115°C
Turn-on
V
fr
Peak forward recovery voltage
≤
370 V
di/dt = 1000 A/µs, T
j
= 115°C
Turn-off
(see Fig. 3, 4)
di/dt
crit
I
rr
Q
rr
E
rr
Max. decay rate of on-state current
Reverse recovery current
Reverse recovery charge
Turn-off energy
≤
≤
≤
≤
430 A/µs
610 A
µC
3.1 J
I
F
= 1100 A,
V
Dclink
= 2800 V
I
F
= 1100 A,
di/dt = 360 A/µs,
T
j
= 115 °C
V
DClink
= 2700 V
T
j
= 115°C,
Thermal
T
j
T
stg
R
thJC
Operating junction temperature range
Storage temperature range
Thermal resistance junction to case
≤
≤
≤
R
thCH
Thermal resistance case to heatsink
≤
≤
Analytical function for transient thermal impedance.
-40...115°C
-40...125°C
32 K/kW
32 K/kW
17 K/kW
10 K/kW
5 K/kW
Anode side cooled
Cathode side cooled
Double side cooled
Single side cooled
Double side cooled
F
m
=
18… 22 kN
Z
thJC
(t) =
å
n
i
1
9.64
0.381
2
3.08
0.428
3
1.18
0.0048
4
0.55
0.0013
R
i
(1 - e
- t /
τ
i
)
R
i
(K/kW)
i
=
1
τ
i
(s)
F
m
= 18… 22 kN Double side cooled
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1151-01 Sep. 01
page 2 of 5
5SDF 05F4502
I
F
[A]
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
Tj = 115°C
V
F
[V]
Fig. 1 Typical forward voltage waveform when
the diode is turned on with high di/dt.
Fig. 2 Forward current vs. forward voltage.
I
rr
[A]
700
T
j
= 115°C
600
di
F
/dt = 360 A/µs
V
DClink
= 2700 V
E
rr
[J]
3.5
T
j
= 115°C
di
F
/dt = 360 A/µs
V
DClink
= 2700 V
3.0
500
2.5
400
2.0
300
1.5
200
1.0
100
0.5
0
0
200
400
600
800
1000
1200
0.0
I
FQ
[A]
0
200
400
600
800
1000
1200
I
FQ
[A]
Fig. 3 Diode reverse recovery current vs. turn-
off current.
Fig. 4 Diode turn-off energy per pulse vs. turn-
off current.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1151-01 Sep. 01
page 3 of 5
5SDF 05F4502
I
FQ
[A]
1800
1600
1400
1200
1000
800
600
400
200
0
0
1000
2000
3000
4000
T
j
= 0 - 115°C
di
F
/dt = 360 A/µs
V
RM
≤
V
RRM
V
DClink
[V]
Fig. 5 Typical current and voltage waveforms at
turn-off in a circuit with voltage clamp.
Fig. 6 Max. repetitive diode forward current.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1151-01 Sep. 01
page 4 of 5
5SDF 05F4502
Fig. 7 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated
otherwise.
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)62 888 6419
+41 (0)62 888 6306
abbsem@ch.abb.com
www.abbsem.com
Doc. No. 5SYA1151-01 Sep. 01
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