V
RRM
I
F(AV)M
I
FSM
V
(T0)
r
T
V
DC-link
=
=
=
=
=
=
4500
900
16×10
3
1.8
0.9
2400
V
A
A
V
mΩ
V
Fast Recovery Diode
5SDF 07H4501
Doc. No. 5SYA1111-02 Oct. 06
•
Patented free-floating silicon technology
•
Low switching losses
•
Optimized for use as large-area snubber diode in GTO
converters
•
Industry standard housing
•
Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter
Repetitive peak reverse voltage
Permanent DC voltage for 100 FIT
failure rate
Permanent DC voltage for 100 FIT
failure rate
Characteristic values
Symbol Conditions
V
RRM
V
DC-link
V
DC-link
f = 50 Hz, t
p
= 10ms, T
vj
= 125°C
Ambient cosmic radiation at sea level in open
air. (100% Duty)
Ambient cosmic radiation at sea level in open
air. (5% Duty)
min
typ
Value
4500
2400
2800
Unit
V
V
V
Parameter
Repetitive peak reverse current
Symbol Conditions
I
RRM
V
R
= V
RRM
, T
vj
= 125°C
max
200
Unit
mA
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
m
a
a
Device unclamped
Device clamped
min
36
typ
40
max
44
50
200
Unit
kN
m/s
m/s
Unit
kg
mm
mm
mm
2
2
Parameter
Weight
Housing thickness
Surface creepage distance
Air strike distance
Symbol Conditions
m
H
D
S
D
a
min
26.0
30
20
typ
max
0.83
26.4
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SDF 07H4501
On-state
Maximum rated values
1)
Parameter
Max. average on-state
current
Max. peak non-repetitive
surge current
Limiting load integral
Max. peak non-repetitive
surge current
Limiting load integral
Characteristic values
Symbol Conditions
I
F(AV)M
Half sine wave, T
C
= 85 °C
min
typ
max
900
1400
Unit
A
A
A
A
2
s
A
A
2
s
Unit
V
V
mΩ
Max. RMS on-state current I
F(RMS)
I
FSM
I
2
t
I
FSM
I
2
t
Symbol Conditions
V
F
V
(T0)
r
T
I
F
= 3000 A, T
vj
= 125°C
T
vj
= 125°C
I
F
= 500...5000 A
min
typ
t
p
= 1 ms, T
vj
= 125°C, V
R
= 0 V
t
p
= 10 ms, T
vj
= 125°C, V
R
= 0 V
16×10
3
1.28×10
40×10
6
3
800×10
max
4.5
1.8
0.9
3
Parameter
On-state voltage
Threshold voltage
Slope resistance
Turn-on
Characteristic values
Parameter
Peak forward recovery
voltage
Symbol Conditions
V
FRM
dI
F
/dt = 500 A/µs, T
vj
= 125°C
min
typ
max
55
Unit
V
Turn-off
Characteristic values
Parameter
Reverse recovery current
Reverse recovery charge
Turn-off energy
Symbol Conditions
I
RM
Q
rr
E
rr
dI
F
/dt = 100 A/µs, T
j
= 125 °C,
I
FQ
= 1000 A,
R
S
= 22
Ω,
C
S
= 0.22 µF
min
typ
max
260
1700
TBD
Unit
A
µC
J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1111-02 Oct. 06
page 2 of 6
5SDF 07H4501
Thermal
Maximum rated values
Note 1
Parameter
Operating junction
temperature range
Characteristic values
Symbol Conditions
T
vj
min
-40
-40
min
typ
max
125
125
Unit
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
K/kW
Storage temperature range T
stg
Parameter
Symbol Conditions
Double-side cooled
F
m
= 36...44 kN
Anode-side cooled
F
m
= 36...44 kN
Cathode-side cooled
F
m
= 36...44 kN
Double-side cooled
F
m
= 36...44 kN
Single-side cooled
F
m
= 36...44 kN
typ
max
12
24
24
3
6
Thermal resistance junction R
th(j-c)
to case
R
th(j-c)A
R
th(j-c)C
Thermal resistance case to R
th(c-h)
heatsink
R
th(c-h)
Analytical function for transient thermal
impedance:
Z
th(j-c)
(t) =
∑
R
th i
(1 - e
i
=
1
i
R
th i
(K/kW)
τ
i
(s)
1
7.440
0.4700
2
2.000
0.0910
3
1.840
0.0110
n
- t/
τ
i
4
)
0.710
0.0047
Fig. 1
Transient thermal impedance junction-to-case
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1111-02 Oct. 06
page 3 of 6
5SDF 07H4501
Fig. 2
Max. on-state voltage characteristics
Fig. 3
Upper scatter range of repetitive reverse
recovery charge vs reverse current rise rate.
Fig. 4
Upper scatter range of reverse recovery
current vs reverse current rise rate
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1111-02 Oct. 06
page 4 of 6
5SDF 07H4501
Fig. 5
Forward recovery vs. turn on di/dt (max.
values)
V
F
(t), I
F
(t)
dI
F
/dt
V
FR
I
F
(t)
I
F
(t)
-dI
F
/dt
Q
RR
V
F
(t)
t
fr
t
fr
(typ)
10 µs
I
RM
V
R
(t)
V
F
(t)
I
R
(t)
t
V
RM
Fig. 6
General current and voltage waveforms
L
i
I
F
V
DC-link
DUT
C
S
D
S
R
S
L
Load
Fig. 7
Test circuit.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1111-02 Oct. 06
page 5 of 6
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