V
RRM
I
F(AV)M
I
FSM
V
(T0)
r
T
V
DClink
=
=
=
=
=
=
4500
1100
20×10
3
1.75
0.88
2800
V
A
A
V
mΩ
V
Fast Recovery Diode
5SDF 10H4503
Doc. No. 5SYA1163-01 Oct. 06
•
Patented free-floating technology
•
Industry standard housing
•
Cosmic radiation withstand rating
•
Low on-state and switching losses
•
Optimized for snubberless operation
Blocking
Maximum rated values
1)
Parameter
Repetitive peak reverse voltage
Permanent DC voltage for 100 FIT
failure rate
Permanent DC voltage for 100 FIT
failure rate
Characteristic values
Symbol Conditions
V
RRM
V
DC-link
V
DC-link
f = 50 Hz, t
p
= 10ms, T
vj
= 125°C
Ambient cosmic radiation at sea level in open
air. (100% Duty)
Ambient cosmic radiation at sea level in open
air. (5% Duty)
min
typ
Value
4500
2800
3200
Unit
V
V
V
Parameter
Repetitive peak reverse current
Symbol Conditions
I
RRM
V
R
= V
RRM
, T
vj
= 125°C
max
50
Unit
mA
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
m
a
a
Device unclamped
Device clamped
min
36
typ
40
max
46
50
200
Unit
kN
m/s
m/s
Unit
kg
mm
mm
mm
2
2
Parameter
Weight
Housing thickness
Surface creepage distance
Air strike distance
Symbol Conditions
m
H
D
S
D
a
min
26.0
33
20
typ
max
0.83
26.4
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SDF 10H4503
On-state
Maximum rated values
1)
Parameter
Max. average on-state
current
Max. peak non-repetitive
surge current
Limiting load integral
Max. peak non-repetitive
surge current
Limiting load integral
Characteristic values
Symbol Conditions
I
F(AV)M
Half sine wave, T
C
= 70 °C
min
typ
max
1100
1740
Unit
A
A
A
A
2
s
A
A
2
s
Unit
V
V
mΩ
Max. RMS on-state current I
F(RMS)
I
FSM
I
2
t
I
FSM
I
2
t
Symbol Conditions
V
F
V
(T0)
r
T
I
F
= 2500 A, T
vj
= 125°C
T
vj
= 125°C
I
F
= 500...2500 A
min
typ
3.1
t
p
= 30 ms, T
vj
= 125°C, V
R
= 0 V
t
p
= 10 ms, T
vj
= 125°C, V
R
= 0 V
20×10
2×10
3
6
3
12×10
2.16×10
max
3.8
1.75
0.88
6
Parameter
On-state voltage
Threshold voltage
Slope resistance
Turn-on
Characteristic values
Parameter
Peak forward recovery
voltage
Symbol Conditions
V
FRM
dI
F
/dt = 600 A/µs, T
vj
= 125°C
dI
F
/dt = 3000 A/µs, T
vj
= 125°C
min
typ
max
80
250
Unit
V
V
Turn-off
Maximum rated values
1)
Parameter
Symbol Conditions
I
FM
= 4000 A, T
vj
= 125 °C
V
DC-link
= 2800 V
min
typ
max
600
Unit
A/µs
Max. decay rate of on-state di/dt
crit
current
Characteristic values
Parameter
Reverse recovery current
Reverse recovery charge
Turn-off energy
Symbol Conditions
I
RM
Q
rr
E
rr
I
FM
= 3300 A, V
DC-Link
= 2800 V
-dI
F
/dt = 600 A/µs, L
CL
= 300 nH
C
CL
= 10 µF, R
CL
= 0.65
Ω,
T
vj
= 125°C, D
CL
= 5SDF 10H4503
min
typ
max
1520
5250
9.5
Unit
A
µC
J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1163-01 Oct. 06
page 2 of 7
5SDF 10H4503
Thermal
Maximum rated values
Note 1
Parameter
Operating junction
temperature range
Characteristic values
Symbol Conditions
T
vj
min
0
-40
min
typ
max
125
125
Unit
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
K/kW
Storage temperature range T
stg
Parameter
Symbol Conditions
Double-side cooled
F
m
= 36...46 kN
Anode-side cooled
F
m
= 36...46 kN
Cathode-side cooled
F
m
= 36...46 kN
Double-side cooled
F
m
= 36...46 kN
Single-side cooled
F
m
= 36...46 kN
typ
max
12
24
24
3
6
Thermal resistance junction R
th(j-c)
to case
R
th(j-c)A
R
th(j-c)C
Thermal resistance case to R
th(c-h)
heatsink
R
th(c-h)
Analytical function for transient thermal
impedance:
Z
th(j-c)
(t) =
∑
R
th i
(1 - e
i
=
1
i
R
th i
(K/kW)
τ
i
(s)
1
7.705
0.5244
2
2.748
0.0633
3
1.009
0.0065
n
- t/
τ
i
4
)
0.539
0.0015
Fig. 1
Transient thermal impedance junction-to-case
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1163-01 Oct. 06
page 3 of 7
5SDF 10H4503
Max. on-state characteristic model:
V
F0
=
A
0
915.50×10
-3
Max. on-state characteristic model:
V
F125
=
A
125
-1.49
A
Tvj
+
B
Tvj
⋅
I
F
+
C
Tvj
⋅
ln(
I
F
+
1)
+
D
Tvj
⋅
I
F
Valid for I
F
= 300 – 30000 A
B
0
C
0
347.20×10
-6
A
Tvj
+
B
Tvj
⋅
I
F
+
C
Tvj
⋅
ln(
I
F
+
1)
+
D
Tvj
⋅
I
F
Valid for I
F
= 300 – 30000 A
B
125
352.90×10
-6
D
0
0.00
C
125
561.70×10
-3
D
125
0.00
202.5×10
-3
Fig. 2
Max. on-state voltage characteristics
Fig. 3
Max. on-state voltage characteristics
Fig. 4
Surge on-state current vs. pulse length. Half-
sine wave
Fig. 5
Surge on-state current vs. number of pulses,
half-sine wave, 10 ms, 50Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1163-01 Oct. 06
page 4 of 7
5SDF 10H4503
Fig. 6
Upper scatter range of turn-off energy per
pulse vs. turn-off current
Fig. 7
Upper scatter range of turn-off energy per
pulse vs reverse current rise rate
Fig. 8
Upper scatter range of repetitive reverse
recovery charge vs reverse current rise rate.
Fig. 9
Upper scatter range of reverse recovery
current vs reverse current rise rate
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1163-01 Oct. 06
page 5 of 7
京公网安备 11010802033920号
EEWORLD
