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5SDF10H6004

Description
Fast Recovery Diode
CategoryDiscrete semiconductor    diode   
File Size164KB,6 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric View All

5SDF10H6004 Overview

Fast Recovery Diode

5SDF10H6004 Parametric

Parameter NameAttribute value
package instructionH, 2 PIN
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)3 V
JESD-30 codeO-XXDB-X2
Maximum non-repetitive peak forward current18000 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Maximum output current1100 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage6000 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Base Number Matches1
V
RRM
I
F(AV)M
I
FSM
V
(T0)
r
T
V
DC-link
=
=
=
=
=
=
6000
1100
18×10
3
1.5
0.6
3800
V
A
A
V
mΩ
V
Fast Recovery Diode
5SDF 10H6004
Doc. No. 5SYA1109-02 Oct. 06
Patented free-floating silicon technology
Low on-state and switching losses
Optimized for use as freewheeling diode in high-
voltage GTO converters
Industry standard housing
Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter
Repetitive peak reverse voltage
Permanent DC voltage for 100 FIT
failure rate
Characteristic values
Symbol Conditions
V
RRM
V
DC-link
f = 50 Hz, t
p
= 10ms, T
vj
= 125°C
Ambient cosmic radiation at sea level in open
air. (100% Duty)
min
typ
Value
6000
3800
Unit
V
V
Parameter
Repetitive peak reverse current
Symbol Conditions
I
RRM
V
R
= V
RRM
, T
vj
= 125°C
max
50
Unit
mA
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
m
a
a
Device unclamped
Device clamped
min
36
typ
40
max
44
50
200
Unit
kN
m/s
m/s
Unit
kg
mm
mm
mm
2
2
Parameter
Weight
Housing thickness
Surface creepage distance
Air strike distance
Symbol Conditions
m
H
D
S
D
a
min
26.2
30
20
typ
max
0.83
26.6
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
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