V
RRM
I
F(AV)M
I
FSM
V
(T0)
r
T
V
DClink
=
=
=
=
=
=
4500
1440
25×10
3
1.75
0.88
2800
V
A
A
V
mΩ
V
Fast Recovery Diode
5SDF 10H4520
Doc. No. 5SYA1170-00 March 05
•
Low temperature bonding technology
•
Industry standard housing
•
Cosmic radiation withstand rating
•
Low on-state and switching losses
•
Optimized for snubberless operation
Blocking
Maximum rated values
1)
Parameter
Repetitive peak reverse voltage
Permanent DC voltage for 100 FIT
failure rate
Permanent DC voltage for 100 FIT
failure rate
Characteristic values
Symbol Conditions
V
RRM
V
DClink
V
DClink
f = 50 Hz, t
p
= 10ms, T
vj
= 140°C
Ambient cosmic radiation at sea level in open
air. (100% Duty)
Ambient cosmic radiation at sea level in open
air. (5% Duty)
min
typ
Value
4500
2800
3200
Unit
V
V
V
Parameter
Repetitive peak reverse current
Symbol Conditions
I
RRM
V
R
= V
RRM
, T
vj
= 140°C
max
100
Unit
mA
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
m
a
a
Device unclamped
Device clamped
min
36
typ
40
max
46
50
200
Unit
kN
m/s
m/s
Unit
kg
mm
mm
mm
2
2
Parameter
Weight
Housing thickness
Surface creepage distance
Symbol Conditions
m
H
D
S
min
25.8
33
typ
max
0.83
26.1
Air strike distance
D
a
20
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SDF 10H4520
On-state
Maximum rated values
1)
Parameter
Max. average on-state
current
Max. peak non-repetitive
surge current
Limiting load integral
Max. peak non-repetitive
surge current
Limiting load integral
Characteristic values
Symbol Conditions
I
F(AV)M
Half sine wave, T
C
= 70 °C
min
typ
max
1440
2260
Unit
A
A
A
A
2
s
A
A
2
s
Unit
V
V
mΩ
Max. RMS on-state current I
F(RMS)
I
FSM
I
2
t
I
FSM
I
2
t
Symbol Conditions
V
F
V
(T0)
r
T
I
F
= 2500 A, T
vj
= 140°C
T
vj
= 140°C
I
F
= 500...2500 A
min
typ
3.1
t
p
= 30 ms, T
vj
= 140°C, V
R
= 0 V
t
p
= 10 ms, T
vj
= 140°C, V
R
= 0 V
25×10
3
3.12×10
16×10
6
3
3.84×10
max
3.8
1.75
0.88
6
Parameter
On-state voltage
Threshold voltage
Slope resistance
Turn-on
Characteristic values
Parameter
Peak forward recovery
voltage
Symbol Conditions
V
FRM
dI
F
/dt = 600 A/µs, T
vj
= 140°C
dI
F
/dt = 3000 A/µs, T
vj
= 140°C
min
typ
max
80
250
Unit
V
V
Turn-off
Maximum rated values
1)
Parameter
Symbol Conditions
I
FM
= 4000 A, T
vj
= 140 °C
V
DClink
= 2800 V
min
typ
max
600
Unit
A/µs
Max. decay rate of on-state di/dt
crit
current
Characteristic values
Parameter
Reverse recovery current
Reverse recovery charge
Turn-off energy
Symbol Conditions
I
RM
Q
rr
E
rr
I
FM
= 3300 A, V
DC-Link
= 2800 V
-dI
F
/dt = 600 A/µs, L
CL
= 300 nH
C
CL
= 10 µF, R
CL
= 0.65
Ω,
T
vj
= 140°C, D
CL
= 5SDF 10H4520
min
typ
max
1600
5600
9.5
Unit
A
µC
J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1170-00 March 05
page 2 of 7
5SDF 10H4520
Thermal
Maximum rated values
1)
Parameter
Operating junction
temperature range
Characteristic values
Symbol Conditions
T
vj
min
0
-40
min
typ
max
140
140
Unit
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
K/kW
Storage temperature range T
stg
Parameter
Symbol Conditions
Double-side cooled
F
m
= 36...46 kN
Anode-side cooled
F
m
= 36...46 kN
Cathode-side cooled
F
m
= 36...46 kN
Double-side cooled
F
m
= 36...46 kN
Single-side cooled
F
m
= 36...46 kN
typ
max
10
18
22
3
6
Thermal resistance junction R
th(j-c)
to case
R
th(j-c)A
R
th(j-c)C
Thermal resistance case to R
th(c-h)
heatsink
R
th(c-h)
Analytical function for transient thermal
impedance:
Z
th(j-c)
(t) =
∑
R
th i
(1 - e
i
=
1
i
R
th i
(K/kW)
τ
i
(s)
1
6.599
0.5067
2
2.148
0.0458
3
1.011
0.0054
n
- t/
τ
i
4
)
0.249
0.0007
Fig. 1
Transient thermal impedance junction-to-
case.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1170-00 March 05
page 3 of 7
5SDF 10H4520
Max. on-state characteristic model:
V
F25
=
A
25
915.50×10
-3
Max. on-state characteristic model:
V
F140
=
A
140
0
A
Tvj
+
B
Tvj
⋅
I
F
+
C
Tvj
⋅
ln(
I
F
+
1)
+
D
Tvj
⋅
I
F
Valid for I
F
= 300 – 30000 A
B
25
C
25
347.20×10
-6
A
Tvj
+
B
Tvj
⋅
I
F
+
C
Tvj
⋅
ln(
I
F
+
1)
+
D
Tvj
⋅
I
F
Valid for I
F
= 300 – 30000 A
B
140
0
D
25
0.00×10
C
140
-6
D
140
-3
202.5×10
-3
-1.87×10
353.50×10
609.20×10
0.00×10
0
Fig. 2
Max. on-state voltage characteristics
Fig. 3
Max. on-state voltage characteristics
Fig. 4
Surge on-state current vs. pulse length. Half-
sine wave.
Fig. 5
Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1170-00 March 05
page 4 of 7
5SDF 10H4520
Fig. 6
Upper scatter range of turn-off energy per
pulse vs. turn-off current.
Fig. 7
Upper scatter range of turn-off energy per
pulse vs reverse current rise rate.
Fig. 8
Upper scatter range of repetitive reverse
recovery charge vs reverse current rise rate.
Fig. 9
Upper scatter range of reverse recovery
current vs reverse current rise rate.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1170-00 March 05
page 5 of 7
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