V
RRM
I
FAVM
I
FSM
V
F0
r
F
V
DClink
=
=
=
=
=
=
2500
950
21
1.2
0.38
1500
V
A
kA
V
mΩ
Ω
V
Fast Recovery Diode
5SDF 11F2501
Doc. No. 5SYA1113-04 Sep. 01
•
Patented free-floating silicon technology
•
Low on-state and switching losses
•
Optimized for use as freewheeling diode in GTO converters
•
Standard press-pack housing, hermetically cold-welded
•
Cosmic radiation withstand rating
Blocking
V
RRM
I
RRM
V
DClink
V
DClink
Repetitive peak reverse voltage
Repetitive peak reverse current
Permanent DC voltage for 100 FIT
failure rate
Permanent DC voltage for 100 FIT
failure rate
≤
2500 V
50 mA
1500
V
V
Half sine wave, t
P
= 10 ms, f = 50 Hz
V
R
= V
RRM,
T
j
= 125°C
100% Duty
5% Duty
Ambient cosmic radiation at
sea level in open air.
Mechanical data
F
m
a
Mounting force
(see Fig. 12)
min.
max.
20 kN
24 kN
2
2
Acceleration:
Device unclamped
Device clamped
50 m/s
200 m/s
0.46 kg
≥
≥
30 mm
20 mm
m
D
S
D
a
Weight
Surface creepage distance
Air strike distance
ABB Semiconductors AG reserves the right to change specifications without notice.
5SDF 11F2501
On-state
(see Fig. 2, 3)
I
FAVM
I
FRMS
I
FSM
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive
surge current
òI
2
dt
Max. surge current integral
950 A
1500 A
21 kA
65 kA
2
2.2⋅10
6
A s
2
2.1⋅10
6
A s
Half sine wave, T
c
= 85°C
tp
tp
tp
tp
I
F
=
=
=
=
=
10 ms
1 ms
10 ms
1 ms
1000 A
Before surge:
T
c
= T
j
= 125°C
After surge:
V
R
≈
0 V
V
F
V
F0
r
F
Forward voltage drop
Threshold voltage
Slope resistance
≤
1.6 V
1.2 V
0.38 mΩ
Approximation for
I
F
= 400…4000
A
T
j
= 125°C
Turn-on
(see Fig. 4, 5)
V
fr
Peak forward recovery voltage
≤
16 V
di/dt = 500 A/µs, T
j
= 125°C
Turn-off
(see Fig. 6 to 11)
I
rr
Q
rr
E
rr
Reverse recovery current
Reverse recovery charge
Turn-off energy
≤
≤
≤
550 A
1200 µC
0.45 J
di/dt = 300 A/µs,
T
j
= 125°C,
I
F
= 700 A,
V
RM
= 2600 V,
C
S
= 2µF (GTO snubber circuit)
Thermal
(see Fig. 1)
T
j
T
stg
R
thJC
Operating junction temperature range
Storage temperature range
Thermal resistance junction to case
≤
≤
≤
R
thCH
Thermal resistance case to heatsink
≤
≤
Analytical function for transient thermal impedance.
-40...125°C
-40...125°C
40 K/kW
40 K/kW
20 K/kW
10 K/kW
5 K/kW
Anode side cooled
Cathode side cooled
Double side cooled
Single side cooled
Double side cooled
F
m
=
20… 24 kN
Z
thJC
(t) =
å
n
i
1
11.83
0.432
2
4.26
0.071
3
1.63
0.01
4
2.28
0.0054
R
i
(1 - e
- t /
τ
i
)
R
i
(K/kW)
i
=
1
τ
i
(s)
F
m
= 20… 24 kN Double side cooled
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1113-04 Sep. 01
page 2 of 6
5SDF 11F2501
Fig. 1
Transient thermal impedance (junction-to-case) vs. time in analytical and graphical form (max. values).
Fig. 2
Forward current vs. forward voltage (typ.
and max. values) and linear approximation
of max. curve at 125°C.
Fig. 3
Surge current and fusing integral vs. pulse
width (max. values) for non-repetitive, half-
sinusoidal surge current pulses.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1113-04 Sep. 01
page 3 of 6
5SDF 11F2501
Fig. 4
Typical forward voltage waveform when the
diode is turned on with a high di/dt.
Fig. 5
Forward recovery voltage vs. turn-on di/dt
(max. values).
Fig. 6
Typical current and voltage waveforms at turn-off when the diode is connected to an RCD snubber, as
often used in GTO circuits.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1113-04 Sep. 01
page 4 of 6
5SDF 11F2501
Fig. 7
Reverse recovery current vs. turn off di/dt
(max. values).
Fig. 8
Reverse recovery charge vs. turn off di/dt
(max. values).
Fig. 9
Turn-off energy vs. turn-off di/dt for I
F
= 300
A (max. values).
Fig. 10 Turn-off energy vs. turn-off di/dt for I
F
= 700
A (max. values).
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1113-04 Sep. 01
page 5 of 6
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